Nippon Telegraph and Telephone Corporation

Takehiko Tawara

Tomohiro Inaba

Hiroo Omi

In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiOis formed on the Si substrate. A metal layer including a rare earth metal is formed in contact with an upper surface of the silicon oxide layer. The silicon oxide layer is reacted with the metal layer through heating to form a first crystal layer including a rare earth oxide crystal obtained by oxidizing the rare earth metal on the Si substrate.

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Tokyo, Japan

Takehiko Tawara