Hitachi Cable, Inc.

Takehiko Tani

Masahiro Arai

Taichiroo Konno

Toshihiro Morisawa

Takashi Furuya

Manabu Kako

Hisataka Nagai

Hisashi Mashiyama

Chie Yoshizawa

Taiichiro Konno

Satoshi Uematsu

In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Manufacturing method of semiconductor photonic device substrate

A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.

Light-emitting element

An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3):={&#x3bb;/(4&#xd7;)}&#xd7;&#x3b1;&#x2003;&#x2003;(1),={&#x3bb;/(4&#xd7;)}&#xd7;(2&#x2212;&#x3b1;)&#x2003;&#x2003;(2), and0.5&#x3c;&#x3b1;&#x3c;0.9&#x2003;&#x2003;(3)

Light emitting diode and method for fabricating same

Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.

Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method

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Hitachi, Japan

Takehiko Tani