Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Takehiko Sato

Shigeru Matsuno

Akira Yamada

Tsuyoshi Horikawa

Takaaki Kawahara

Masayoshi Tarutani

Mikio Yamamuka

Fusaoki Uchikawa

Hisao Watarai

Toshio Umemura

Yoshikazu Utsumi

Hidetada Tokioka

Yuichi Sakai

Toshihisa Honda

Chisako Maeda

Masatomi Okumura

Ken Sato

A photoelectric conversion device includes an n-type semiconductor layer and a p-type semiconductor layer, a collecting electrode formed on the n-type semiconductor layer, and a collecting electrode formed on the p-type semiconductor layer, on a back surface opposite to a light receiving surface of an n-type crystalline silicon substrate, and an n-type semiconductor region on a surface on a light receiving surface side of the n-type crystalline silicon substrate, wherein in the n-type semiconductor region, an n-type semiconductor region that is opposed to the n-type semiconductor layer with the n-type crystalline silicon substrate therebetween and an n-type semiconductor region that is opposed to the p-type semiconductor layer with the n-type crystalline silicon substrate therebetween have different average impurity concentrations.

Photoelectric conversion device, manufacturing method thereof, and photoelectric conversion module

In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device

A CVD source material which can be stably tramsported to a reactor in order to form a platinum metal, Cu, or an oxide of them as an electrode. An organometallic compound including a platinum metal (Ru, Pt, Ir, Pd, Os, Rh, Re) or Cu, is dissolved into tetrahydrofuran or a solvent containing tetrahydrofuran to obtain the CVD source material. In this material, the amount of moisture is preferably not more than 200 ppm. A film is formed by CVD employing this source material, the material is supplied stably, and the properties of the electrode film are improved. The capacitance property of the film is improved. Wiring of an electrical device may be formed by employing source material.

CVD source material for forming an electrode, and electrode and wiring film for capacitor formed therefrom

There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.

Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby

A method of forming a (Ba, Sr) TiO high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO thin film is formed on a substrate by CVD reaction using the material gas.

Method of forming high dielectric constant thin film and method of manufacturing semiconductor device

A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.

Vaporizing device for CVD source materials and CVD apparatus employing the same

A method of forming a (Ba, Sr) TiO,high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO,thin film is formed on a substrate by CVD reaction using the material gas.

An electrode for a dielectric thin film device includes an adhesive layer adhering to a substrate, a diffusion suppressing layer containing compounds of metal elements constituting the adhesive layer or the substrate, and a main conduction layer. The crystallinity is enhanced by preventing diffusion of unnecessary elements into the dielectric thin film.

Electrode for dielectric-thin film device, and ultrasonic wave

The invention relates to a temperature-measuring-resistor which comprises vanadium oxide as a matrix material. The matrix material further contains at least one member selected from a metal, a metal oxide and a metal nitride, and the member has an electric conductivity higher than that of the vanadium oxide. The temperature-measuring-resistor has a low room temperature resistivity, and a volume resisivity that varies greatly with temperature.

Temperature-measuring-resistor, manufacturing method therefor, ray

Infrared detection element array and method for fabricating the same

A thermal-type infrared detecting element is provided which includes an infrared detecting member, a support member supporting the infrared detecting member, a substrate holding the support member, and a low thermal conduction part intervening between the substrate and a central portion of the support member, the support member having a link portion in at least a peripheral portion thereof which links the support member to the substrate and slits and/or grooves defined at a location adjacent the link portion. This infrared detecting element exhibits excellent sensitivity and responsiveness while requiring no cooling, and a one- or two-dimensional array of the element assures clear imaging with less crosstalk.

Growing community of inventors

Hyogo, Japan

Takehiko Sato