Renesas Electronics Corporation

Asahi Glass Company, Limited

Takehiko Sakamoto

Tomoaki Uno

Kazuyuki Umezu

Koujirou Matsui

Atsushi Watakabe

Tomoyuki Fujita

Yoshitomi Morizawa

Hisao Hori

Kana Ishikawa

A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver circuit region on the main surface of the semiconductor substrate. A wiring structure having a plurality of wiring layers made of the same metal material is formed on the semiconductor substrate. The gate electrodes of the plurality of unit MISFET elements formed in the LDMOSFET forming region are electrically connected to each other via gate wirings formed in all of the plurality of wiring layers made of the same metal material.

Semiconductor device

To provide a method for producing an organic compound having a sulfo group by efficiently hydrolyzing an organic compound having a fluorosulfonyl group with a small number of steps with a small quantity of waste liquid. A method for producing an organic compound having a sulfo group, which comprises bringing an organic compound having a fluorosulfonyl group into contact with subcritical water at from 200 to 320&#xb0; C. to convert the fluorosulfonyl group into a sulfo group.

Method for producing organic compound having sulfo group, method for producing liquid composition, and method for hydrolyzing organic compound having fluorosulfonyl group

Growing community of inventors

Kanagawa, Japan

Takehiko Sakamoto