Toyoda Gosei Co., Ltd.

Showa Denko K.k.

Takehiko Okabe

Daisuke Hiraiwa

Hisayuki Miki

Yasunori Yokoyama

Takashi Hodota

Katsuaki To

Kenzo Hanawa

Remi Ohba

Kyosuke Masuya

Munetaka Watanabe

Kyousuke Masuya

Mamoru Kitsukawa

A method of fabricating a magnetic recording medium by sequentially forming a magnetic recording layer, a protection layer, and a lubricant layer on a stacked body, includes forming the lubricant by depositing a first lubricant on the stacked body after forming the protection layer, by vapor-phase lubrication deposition, without exposing the stacked body to atmosphere, and depositing a second lubricant on the stacked body after depositing the first lubricant, by vapor-phase lubrication deposition, without exposing the stacked body to atmosphere. The first lubricant has a lower molecular mass and a higher chemical polarity than those of the second lubricant.

Magnetic recording medium fabrication method

A method of fabricating a magnetic recording medium by sequentially forming a magnetic recording layer, a protection layer, and a lubricant layer on a stacked body, includes forming the lubricant by depositing a first lubricant on the stacked body after forming the protection layer, by vapor-phase lubrication deposition, without exposing the stacked body to atmosphere, and depositing a second lubricant on the stacked body after depositing the first lubricant, by vapor-phase lubrication deposition, without exposing the stacked body to atmosphere.

Magnetic recording medium fabrication method and apparatus

A method of fabricating a magnetic recording medium by sequentially forming a magnetic recording layer, a protection layer, and a lubricant layer on a stacked body, includes forming the lubricant by depositing a first lubricant on the stacked body after forming the protection layer, by vapor-phase lubrication deposition, without exposing the stacked body to atmosphere, and depositing a second lubricant that is dissolved in an organic solvent onto the stacked body after depositing the first lubricant.

A semiconductor light emitting element () including of a substrate () composed of sapphire; a laminated semiconductor layer () composed of an n-type semiconductor layer (), a light emitting layer () and a p-type semiconductor layer () provided on the substrate (); a first electrode () formed in the p-type semiconductor layer (); and a second electrode () formed in the n-type semiconductor layer (). Further, the first electrode () includes a first conductive layer () composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (); a reflection layer () which contains silver laminated on the first conductive layer (); a second conductive layer () composed of an oxide conductive material laminated on the reflection layer (); and a coating layer () provided so as to cover the first conductive layer (), the reflection layer () and the second conductive layer ().

Semiconductor light emitting element and method for producing semiconductor light emitting element

A semiconductor light-emitting device () of the present invention includes: a substrate (); a laminated semiconductor layer () containing a light-emitting layer, which is formed on the substrate (); a first electrode () formed on the upper surface () of the laminated semiconductor layer (); and a second electrode () formed on an exposed surface () that is formed by partially cutting the laminated semiconductor layer (), wherein the first electrode () includes a transparent electrode () containing a hole portion () through which the upper surface () of the laminated semiconductor layer () is exposed, a junction layer () formed on a bottom surface () and an inner wall () of the hole portion (), and a bonding pad electrode () formed to cover the junction layer ().

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp

It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.

Semiconductor light-emitting element, electrode structure and light-emitting device

Disclosed is a semiconductor light emitting chip () that is composed of: a substrate (), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces () configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions () in the side surfaces (), the modified regions being formed by laser radiation; and a light emitting element (), which is provided on the substrate front surface () of the substrate (). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.

Semiconductor light emitting chip and method for processing substrate

Disclosed is a semiconductor light emitting element () which is provided with: a laminated semiconductor layer which is formed on a substrate, and in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type; a first electrode (first electrode ()) which is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and has a first opening () used for electrical connection with an outside; and a second electrode (second electrode ()) which is formed on a surface of the second semiconductor layer, and has a second opening () used for electrical connection with the outside. The surface of the second semiconductor layer is exposed by cutting off a part of the laminated semiconductor layer. The first opening () has, on the second opening () side of the first opening () in a planar view, an arc portion which is formed to keep approximately equal distance from an outer edge portion of the second opening (). With such a semiconductor light emitting element, workability and heat dissipation effects in the FC (flip-chip bonding) mounting technology of the semiconductor light emitting element are improved.

Semiconductor light emitting element with first and second electrode openings arranged at a constant distance

In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step), forming first modified regions extending toward the first direction and second modified regions extending along the substrate front surface and toward a second direction different from the first direction in the substrate (stepand step), and dividing the element-group formation substrate using the first modified regions and the second modified regions (step).

Method for producing semiconductor light-emitting chip

One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer () made of a group III nitride is laminated on a substrate (), an n-type semiconductor layer () comprising a base layer (), a light-emitting layer (), and a p-type semiconductor layer () are laminated on the buffer layer () in this order, comprising: a pretreatment step in which the substrate () is treated with plasma; a buffer layer formation step in which the buffer layer () having a composition represented by AlGaN (0&#x2266;x&#x3c;1) is formed on the pretreated substrate () by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer () is formed on the buffer layer ().

Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.

Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode

Disclosed is a semiconductor light emitting element (), which includes: an n-type semiconductor layer (); a light emitting layer (), which is laminated on one surface of the n-type semiconductor layer () such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer () laminated on the light emitting layer (); a multilayer reflection film (), which is configured by alternately laminating low refractive index layers () and high refractive index layers () that have a refractive index higher than that of the low refractive index layers () and also have transparency with respect to light emitted from the light emitting layer (), and which is laminated on the exposed portion of the n-type semiconductor layer (), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (), which is formed by penetrating the multilayer reflection film (), and which has one end thereof connected to the exposed portion of the n-type semiconductor layer (); and an n-electrode (), which is laminated on the multilayer reflection film (), and which has the other end of the n-conductor portion () connected thereto. Thus, light extraction efficiency is improved in the semiconductor light emitting element mounted by flip-chip bonding.

Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus

The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (); and a first electrode (), which is the cathode, is formed on the p-type semiconductor layer (). Also, between the p-type semiconductor layer () and a reflecting layer (), the first electrode () is provided with a crystalline first transparent electrode layer () and a non-crystalline second transparent electrode layer (). The crystalline first transparent electrode layer () increases adhesion with the p-type semiconductor layer (), and the non-crystalline second transparent electrode layer () suppresses delamination of the reflecting layer (). Also, the first transparent electrode layer () and the second transparent electrode layer () transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics. In this way, delamination of the reflecting layer and degradation of reflective characteristics are suppressed in a semiconductor light-emitting element mounted using flip-chip (FC) mounting.

Semiconductor light-emitting element, semiconductor light-emitting device, method for producing semiconductor light-emitting element, method for producing semiconductor light-emitting device, illumination device using semiconductor light-emitting device, and electronic apparatus

Disclosed is a semiconductor light emitting element () which includes: plural n-side columnar conductor portions (), each of which is provided by penetrating a p-type semiconductor layer () and a light emitting layer (), and is electrically connected to an n-type semiconductor layer (); an n-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the surface of the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the n-side columnar conductor portions (); plural p-side columnar conductor portions (), each of which is electrically connected to the p-type semiconductor layer (); and a p-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the p-side columnar conductor portions (). Thus, nonuniformity of the quantity of light outputted from the light emitting layer of the semiconductor light emitting element is suppressed, and reduction of the area of the light emitting layer in the semiconductor light emitting element is suppressed.

Growing community of inventors

Ichihara, Japan

Takehiko Okabe