Sumitomo Electric Industries, Limited

Takehiko Kikuchi

Hideki Yagi

Naoki Fujiwara

Nobuhiko Nishiyama

Yoshihiro Yoneda

Takuo Hiratani

Toshiyuki Nitta

Yasushi Fujimura

Naoya Kono

Masataka Watanabe

Ryuji Masuyama

Yutaka Moriyama

Masaru Takechi

Morihiro Seki

Kenji Sakurai

Hajime Shoji

A method of manufacturing a semiconductor optical device includes a step of bonding a semiconductor element to a substrate that includes silicon, the semiconductor element being made of a III-V compound semiconductor and having optical gain; after the step of bonding the semiconductor element, a step of molding the semiconductor element by wet-etching; and after the step of molding the semiconductor element, a step of forming a mesa at the semiconductor element. The substrate includes a waveguide, a groove that extends along the waveguide, a terrace that is positioned on a side of the groove opposite to the waveguide, and a wall that covers the groove. The step of bonding the semiconductor element is a step of bonding the semiconductor element to the waveguide, the groove, the terrace, and the wall of the substrate.

Semiconductor optical device and method of manufacturing same

A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

Semiconductor optical device and method for producing semiconductor optical device

A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

Semiconductor optical device

A method for producing a semiconductor device includes a step of bonding a chip to a SOI wafer, the chip being formed of a III-V group compound semiconductor and including a substrate and a first semiconductor layer; and a step of removing the substrate and the first semiconductor layer from the chip after the step of bonding. In the producing method, the first semiconductor layer has a tensile strain, and the SOI wafer and the chip are heated to a first temperature in the step of bonding, and are cooled to a second temperature lower than the first temperature after the step of bonding.

Semiconductor device and method for producing semiconductor device

A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

Semiconductor device and method of manufacturing the same

A method of manufacturing an optical semiconductor element includes: stacking a plurality of compound semiconductor layers on a first substrate containing a compound semiconductor; dividing the first substrate into small pieces; forming terraces, grooves, walls, and a first mesa for a waveguide on a second substrate containing silicon; jointing at least one small piece to the second substrate after the forming; wet-etching the first substrate so as to expose the compound semiconductor layers after the jointing; and forming a second mesa opposite to the first mesa from the compound semiconductor layers; wherein the grooves are formed on both sides of the first mesa, the terraces are formed on both sides of the first mesa and the grooves, and the walls are arranged in an extending direction of each groove.

Optical semiconductor element and method of manufacturing the same

A multimode interference device includes: man MMI semiconductor mesa having first and second end faces that are arranged in a direction of a first axis, and first and second side faces that extend in the direction of the first axis; first and second semiconductor mesas disposed apart from the first and second side faces, respectively; an embedding region covering the MMI semiconductor mesa and the first and second semiconductor mesas and having first and second openings at the first and second semiconductor mess, respectively; and first and second metal bodies making contact with the first and second semiconductor mesas through the first and second openings, respectively. The first and second end faces have multiple first ports and multiple second ports, respectively. The first semiconductor mesa, the MMI semiconductor mesa, and the second semiconductor mesa are arranged in a direction of a second axis intersecting the first axis.

Multimode interference device, mach-zehnder modulation device

A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region and being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region that is spaced apart from the first part by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

Semiconductor optical device and semiconductor assembly

An optical module that implements an MMI device including an optical hybrid primarily made of semiconductor material is disclosed. The MMI device, which has a rectangular plane shape and includes multi-mode couplers, is mounted on a carrier. The carrier provides a step extending in a whole lateral width of a top surface thereof, where the step makes a gap against the MMI device in an area where the MMI couplers are formed.

Optical module having multi-mode coupler formed on semiconductor substrate

A semiconductor optical device includes a substrate including first and second regions arranged in a first direction, a photodiode disposed on the first region, an optical waveguide disposed on the second region, and a buried layer disposed on a side surface of the photodiode. The side surface of the photodiode extends in the first direction. The photodiode has a first end surface intersecting with the first direction, and the optical waveguide is in direct contact with the first end surface. The buried layer is composed of a III-V compound semiconductor doped with a transition metal. The photodiode includes a stacked semiconductor layer including a first cladding layer, a light-absorbing layer and a second cladding layer stacked in that order on the substrate. The light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer.

Growing community of inventors

Osaka, Japan

Takehiko Kikuchi