Canon Kabushiki Kaisha

Canon Denshi Kabushiki Kaisha

Takehiko Kawasaki

Norio Kaneko

Keisuke Yamamoto

Yasuhiro Shimada

Yoshio Suzuki

Naoaki Maruyama

Ryo Hayashi

Masato Ofuji

Yasuyoshi Takai

Yoshitaka Zaitsu

Tsutomu Ikeda

Taiko Motoi

Masatake Akaike

Naoyo Gemma

Takayuki Yagi

Hidetoshi Nojiri

Osamu Takamatsu

Fumio Kishi

Masaru Nakayama

Haruki Kawada

Hisato Yabuta

Koichiro Nakanishi

Katsuhiko Shinjo

Kimio Handa

Toshitsugu Morimoto

Toshihiko Ouchi

Tohru Den

Masafumi Sano

Ryo Kuroda

Kunihiro Sakai

Toshihiko Miyazaki

Takeaki Itsuji

Katsumi Abe

Katsunori Hatanaka

Akihiko Yamano

Hideya Kumomi

Kiyoshi Takimoto

Kazuaki Ohmi

Yuji Kasanuki

Masahiro Tagawa

Takatsugu Wada

Nobuyuki Kaji

Takeo Yamazaki

Hisae Shimizu

Rei Kurashima

Michinori Shioda

Hiroo Azuma

Satoshi Nozu

Fujio Iwatate

Ayanori Endo

Kozo Hokayama

Atsuko Shinjou

Tsutomi Ikeda

An electromechanical transducer includes a plurality cells that are electrically connected to form a unit. Each of the cells includes a first electrode and a second electrode provided with a gap being disposed therebetween. Dummy cells that are not electrically connected to the cells are provided around the outer periphery of the unit of the cells.

Electromechanical transducer and production method therefor

When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Electromechanical transducer

A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

Method for controlling threshold voltage of semiconductor element

Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

Semiconductor device and display apparatus

A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same

To provide new image forming apparatus and a printing method that can obtain information on image forming by using terahertz waves. An image forming apparatus includes a stock unit for stocking a media stack made of a plurality of media with images formed on; an electromagnetic wave generation unit for generating a terahertz wave to radiate on the media stack; an electromagnetic wave detection unit for detecting the terahertz wave propagated in a laminating direction of the media stack; a memory unit for storing reference data; a processing unit for generating data related to an image forming state from the detection signal from the electromagnetic wave detection unit, information on the number of sheets of the medium, and information on the image formed on the medium; and a comparative unit for comparing the data generated by the processing unit and the reference data stored in the memory unit.

Image forming apparatus, printing method and printing apparatus

In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10cmeVor less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In&#x2014;Ga&#x2014;Zn&#x2014;O (IGZO), amorphous In&#x2014;Zn&#x2014;O (IZO) and amorphous Zn&#x2014;Sn&#x2014;O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Method of treating semiconductor element

To provide a sheet material identifying apparatus for identifying the kind of a sheet material, including an adjusting assembly for dehumidifying or humidifying a predetermined region of the sheet material and adjusting the moisture content of the predetermined region, external force applying means for applying an external force to the predetermined region of the sheet material whose moisture content is adjusted and detecting means for detecting an external force propagated through the sheet while the external force is applied by the external force applying means; wherein an external force is applied to the predetermined region whose moisture content is adjusted through the adjusting assembly by the external force applying means and the kind of a sheet material is identified in accordance with the external force propagated through the sheet detected by the detecting means.

Sheet material identifying apparatus, sheet material treating apparatus and sheet material identifying method

Information (particularly, water content) of a sheet material which changes during progression of processing is estimated with higher accuracy and information output or (image formation) processing is performed. The water content estimation method of the present invention includes: detecting a first information regarding moisture contained in a sheet material; detecting a second information regarding a factor affecting information regarding the moisture contained in the sheet material; predicatively computing an estimation of a water content of the sheet material based on the first information and the second information; and adjusting processing conditions for image formation based on the estimation of the water content which is computed.

Water content estimation apparatus, sheet material processing apparatus, water content estimation method, and sheet material processing method

A multi-functional sensor for deriving information on a recording sheet material comprising an impact-applying unit for applying an external mechanical force onto the recording sheet material, a signal-detecting unit for detecting a signal of response of the recording sheet material to the external mechanical force, a signal-processing unit for processing the signal, and a signal-judging unit for deriving a property of the recording sheet material by comparison of a signal from the signal-detecting unit or the signal processing unit with information memorized preliminarily, wherein the signal-processing unit comprises a separation section for separating the signal from the signal-detecting unit into output signals on the properties of the recording sheet material, and a processing section for deriving, by statistical treatment, a correlation equation showing a correlation between the separated output signal and the properties of the recording sheet material.

Multi-functional sensor and method of sensing

Provided is a sheet material discrimination apparatus including: an impact force applying member for colliding with the surface of a sheet material, an impact force receiving member for receiving the impact force applying member through the sheet material, a detecting unit for outputting an electric signal corresponding to an impact force received by the impact force receiving member, and a cushioning material for absorbing the impact force transmitted to the detecting unit, wherein a support member having a bending rigidity higher than the bending rigidity of the detecting unit with respect to the impact force is arranged between the detecting unit and the cushioning material.

Sheet material discrimination apparatus, sheet material information output apparatus, and image forming apparatus

Disclosed is an information detecting device capable of reducing fluctuation in detection accuracy. A recording sheet P transported through a transport path comes into contact with a displacing member, and, in this state, a motor is driven to rotate a cam, and the resilient force of a coil spring causes a pressurizing member to collide with the recording sheet P. The impact force at that time is detected by a detection sensor, and transmitted to a sheet material information obtaining means. Then, on the basis of the detection result, it is possible to detect the type, density, thickness, surface irregularities, etc. of the recording sheet P. At this time, the recording sheet P is in contact with the displacing member, whereby it is possible to reduce fluctuation in detection accuracy due to positional deviation of the recording sheet P.

Image forming apparatus with impact applying unit and detecting unit for detecting sheet information corresponding to impact force

An external force application unit is allowed to impact on a sheet material, and an external force detection unit detects an impact force through the sheet material. Further, there is provided a push-in sensing unit for detecting abnormality of the sheet material entering a space between the external force application unit and the external force detection unit. When the push-in sensing unit detects the abnormality, a control circuit operates a motor to rotate a cam, thereby moving the external force application unit to be retracted in a direction in which the external force application unit is moved away from an entering position of the sheet material.

Sheet material information detection apparatus, sheet material processing apparatus, and sheet material processing method

Growing community of inventors

Kamakura, Japan

Takehiko Kawasaki