Screen Holdings Co., Ltd.

Takeharu Ishii

Yuji Tanaka

Yasuhiro Fukumoto

Tomohiro Matsuo

Masahiko Harumoto

Masaya Asai

Chisayo Nakayama

A substrate treating method for performing a heat treatment of a substrate that has a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space. The heat treating step is performed after the exhaust step and the inert gas supply step.

Substrate treating method and apparatus used therefor

An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Substrate treating method

Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.

Disclosed is a substrate treating method for treating a substrate with a directed self-assembly material applied thereto. The substrate treating method includes a heating step and a cooling step. The heating step includes heating the substrate to perform phase separation of the directed self-assembly material by maintaining an interior of a treatment container in a non-oxidizing gas atmosphere and placing the substrate at a heating position. The cooling step includes cooling the substrate by maintaining the interior of the treatment container in the non-oxidizing gas atmosphere, placing the substrate at a cooling position further away from the heating unit than the heating position, supplying non-oxidizing gas into the treatment container, and exhausting gas within the treatment container.

Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.

Disclosed is a substrate treating apparatus including a treatment container, a pin, a seal housing, a seal member, and an exhaust port. The treatment container includes an opening. The pin is disposed between an interior of the treatment container and an exterior of the treatment container through the opening, and is configured to reciprocate along an axis thereof. The seal housing is disposed in the exterior of the treatment container. The seal housing is in close contact with the treatment container around the opening, and accommodates a part of the pin. The seal member is in close contact with an inner peripheral surface of the seal housing, and in close contact with an outer peripheral surface of the pin so as to be slidable relative to the pin. The exhaust port is in connection with the seal housing in a communicated manner.

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Kyoto, Japan

Takeharu Ishii