Shimadzu Corporation

Other

Kinki University

Takeharu Etoh

Hispec Goushi Kaisha

Japan Atomic Energy Agency

Link Research Corporation

Etoh, Takeharu

Hideki Mutoh

Kenji Takubo

Yasushi Kondo

Kiyoshi Ogawa

Tetsuo Yamada

Hideki Soya

Hideki Muto

Konoe Etoh

Toshiaki Akino

Dao Vu Truong Son

Masatoshi Kureta

Masatoshi Arai

A backside-illuminated multi-collection-gate image sensor is expected to achieve ultra-high-speed imaging. Signal electrons generated by incident light are collected to the pixel center of the front side and distributed to multiple collection gates placed around the center at a very short time interval. The temporal resolution is measured by the spread of arrival times of signal electrons to a collection gate. The major cause of the spread is mixing of signal electrons generated near the pixel border travelling a longer horizontal distance to the pixel center and those generated near the pixel center. Suppression of the horizontal travel time effectively decreases the standard deviation of the distribution of the arrival time. Therefore, devices to suppress the effects of the horizontal motion are introduced, such as a pipe-like photoelectron conversion layer with a much narrower cross section than the pixel area and a funnel-like photoelectron conversion layer.

High-speed image sensor

A solid-state imaging apparatus allows precise observation and analysis of ultra-high-speed phenomena at a frame rate more than 100 Mega frames per second, which has been targeted in advanced science and engineering. The solid-state imaging apparatus comprises pixels arranged in M columns and N rows. Each pixel includes a first layer for photoelectric conversion and a second layer having m charge collection devices, where m is equal to or greater than 3, for collecting and storing charges generated light incident on a substantially whole area of the pixel, and a readout device for reading out the charges, where m charge collection devices are locally placed in an area around a center of the pixel. The second layer further includes a second storage device for storing the charges collected and stored by each of the collection devices.

Solid-state imaging apparatus

An image sensor and an image sensing method can obtain image signals with a high S/N ratio in a high-speed image pickup operation. Signal charges are input to input transfer stageof CCD memory. Final transfer stageis formed so as to be connected to the input transfer stageand able to transfer signal charges to the input transfer stage. In an accumulation mode, read gateand drain gateare not turned on and the next transfer operation of the CCD memoryis conducted. The accumulated signal charges are transferred on a stage by stage basis and the signal charges obtained at the first image pickup timing are transferred again straightly to the input transfer stage. In this state, the signal charges obtained newly at photoelectric conversion sectionat the next image pickup timing are injected into the input transfer stageby way of input gate. As a result of this operation, the signal charges obtained at the last image pickup timing are added to the signal charges accumulated in the input transfer stageso that integrated signal charges obtained by adding the two sets of signal charges are accumulated in the input transfer stage

Image sensor, semiconductor device and image sensing method

A sample S is irradiated with a two-dimensionally spread ray of laser light to simultaneously ionize substances within a two-dimensional area on the sample. The resultant ions are mass-separated by a TOF mass separatorwithout changing the interrelationship of the emission points of the ions. The separated ions are then directed to a two-dimensional detector sectionthrough a deflection electric field created by deflection electrodesand. The two-dimensional detector sectionconsists of a plurality of detection unitsarranged in parallel, each unit including an MCP, fluorescent plateand two-dimensional array detector. The magnitude of deflecting the flight path of the ions by the deflection electric field is changed in a stepwise manner with the lapse of time from the generation of the ions so that a plurality of mass analysis images are sequentially projected on each detection unit. When the mass analysis image shifts from one detection unit to another, the data acquisition operation by the two-dimensional array detector in the previous detection unit is discontinued. As a result, a predetermined number of the latest images are held inside the detector. Thus, the measurement time can be extended to widen the measurable mass-to-charge ratio range, while ensuring a high mass resolution.

Mass spectrometer

A back illuminated imaging devicecomprises a plurality charge blocking regionswhich are arranged on a front surfaceside, embedded in CCD charge transferring paths, and in which a first thickness T1 measured from the front surfaceof first portionsextending along the CCD charge transferring pathsis larger than a first thickness T2 of second portionsextending along channel stops

Back illuminated imaging device

A photographing apparatus includes a photographing plan memory for setting photographing conditions based on a predetermined photographing plan, a vibration sensor for detecting vibration caused by an explosion of a balloon serving as a photographic subject, and a trigger generating circuit for taking in the timing of detection by the vibration sensor as a trigger. The above photographing plan is prepared beforehand for changing from low-speed photography to high-speed photography in response to the trigger, and changing from high-speed photography to low-speed photography after acquiring '40 frames'. With this plan, the low-speed photography is adopted before and after the balloon explosion, an amount of photographic data tends to be small. Photographs may be taken out within limited photographic data, even with a limited memory capacity. At a moment of balloon explosion, rapid variations due to the explosion may be photographed by high-speed photography with high accuracy.

Photographic apparatus and photographic method using same

A back-illuminated image sensor has a converting layer, charge collecting portions, and suppressing regionsand. The converting layerfor converting an incident beam into signal charges is formed on one side of an incident faceon which an incident beam is irradiated. The converting layeris provided for each of pixels arranged in two dimensions. The charge collecting portionsfor collecting signal charges generated in the converting layerextends from the converting layerto a surfaceopposite to the incident face. The suppressing regionsandfor suppressing the flow of the signal charges from the converting layerto peripheral circuitsis formed between the converting layerand the peripheral circuits

Back-illuminated image device having signal charges suppressing region

The image sensoris provided with a chiphaving a image capturing surfaceand a packaged to which the chipis attached. The image capturing surface include a plurality of blocksto. Each of blockstohas image information read-out lines. A position adjustment mechanismis provided, which changes relative positions of the image capturing areaof the image sensorand an optical axisof an incident light from an optical systemto the image capturing area, by &#xbd; a longitudinal and lateral length of the blocksto

Image capturing apparatus for adjusting a relative position between an image sensor and an optical axis

A fast imaging devicehas a charge signal converter, a charge signal accumulatorand a charge signal transporter. A charge signal accumulatoris provided to each charge signal converter. A charge signal accumulatorextends linearly while inclining with respect to a line Lconnecting charge signal converter. The other end of a charge signal accumulator, connected at one end thereof to a charge signal converterconstituting a corresponding column, merges to a charge signal transporter. This construction reduces noise and increases a frame rate.

Fast imaging device and fast photographing device

An ultra-high speed image sensor is a frame transfer type. A charge corresponding to an intensity of a incident ray is generated at an element of a charge transfer path corresponding to each window. The generated charge is transferred on the charge transfer path by voltages applied from the charge transfer electrodes to. Each of the charge transfer electrodes to has a larger size in a charge transfer direction at portions corresponding to the window than that at portions covered with the intercepting film.

Ultrahigh speed image pickup device

A high-speed image sensor has a plurality of signal converting means () for generating electric signals corresponding to an incident light intensity and a plurality of electric signal recording means () for recording electric signals output from corresponding signal converting means (). The electric signal recording means () is linearly shaped and has a read-out line () for each of longitudinal sections thereof. The read-out line () is used for directly reading out the electric signals out of a light receptive area.

High-speed imaging device

An image sensor () has a plurality of chips (). Each chip () has a plurality of converter () for converting incident beams into electric signals and a plurality of electric signal storages (). The converters () are arranged in one row or a plurality of rows in the vicinity of the first end portion () of the chip (). Each electric signal storage () extends from the converter () to the second end portion () opposite to the first end portion (). The first end portion () of each chip () is shifted relative to the first end portion () of an adjacent chip () so that the row of the converters () of the respective chips () are stepwise exposed.

Image sensor having a plurality of chips

The photo-receptive area (21) of an image sensor is formed from a plurality of pixels (20) each having a sensor (23) for generating an electric signal in response to a brightness of incident light. To the sensors (23) are connected signal storage/read-out CCDs (24A-24F), respectively, each comprising a plurality of charge storages (25a-25f) and being elongated over two or more of the plurality of pixels (20). A plurality of the linear-shaped signal storage/read-out CCDs (24A-24F) are arranged parallel within a width of each pixel (20). For an image sensing process, electric signals generated in the sensors of the pixels (20) are transferred parallel in one direction by the plurality of signal storage/read-out CCDs (24A-24F), by which the electric signals generated in the sensors are stored in the charge storages (25a-25f) of the signal storage/read-out CCDs (24A-24F). For a signal read process, the electric signals stored in the charge storages (25a-25f) of the signal storage/read-out CCDs (24A-24F) are transferred parallel in the same direction as in the image sensing process, by which the electric signals are read out of the photo-receptive surface (21).

High-speed CCD image transfer apparatus

An image sensing apparatus with an image sensor which comprises a plurality of sensors (47) each provided on each of pixel (37) forming a photo-receptive area (36), the sensor generating an electric signal in response to brightness of incident light from a subject; and a plurality of dual-function CCDs (40A-40H) for signal storage and read-out connected to the sensors, respectively, the dual-function CCDs each comprising a plurality of charge storage elements. The dual-function CCDs are of substantially linear shape, elongated over two or more of the pixels, and arranged parallel to each other. During an image sensing process, electric signals generated in the sensors of the pixels are transferred parallel in one direction by the plurality of dual-function CCDs, whereby the electric signals generated in the sensor are stored in the charge storage elements of the dual-function CCDs. During a signal read-out process, the electric signals stored in the charge storage elements of the dual-function CCDs are transferred parallel in the same direction as in the image sensing process, whereby the electric signals are read out of the photo-receptive area.

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Mino, Japan

Takeharu Etoh