Zeon Corporation

International Business Machines Corporation

Takefumi Suzuki

Robert L Bruce

Eric Andrew Joseph

Joe Lee

Tatsuya Sugimoto

Masahiro Nakamura

Hiroyuki Miyazoe

John Christopher Arnold

Nathan P Marchack

Sebastian Ulrich Engelmann

Jeffrey C Shearer

Jo Konagawa

In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication

A method of forming field effect transistor (FET) circuits, and forming Integrated Circuit (IC) chips with the FET circuits. After forming gate sidewall spacers, filling with insulation and planarizing to the top of the sidewall spacers, self-aligned source/drain contacts are etched through the insulation and said gate dielectric layer to source/drain regions. A combination fluoroether/hydrofluoroether-hydrofluorocarbon (*FE-HFC) plasma etch etches the source/drain contacts self-aligned. The self-aligned contacts are filled with conductive material, and FETs are wired together into circuits, connecting to FETs through the self-aligned contacts.

Method of forming field effect transistor (FET) circuits, and forming integrated circuit (IC) chips with the FET circuits

Interconnects fabricated by hydrofluorocarbon gas-assisted plasma etch

The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.

Etching gas and etching method

A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.

Plasma etching method

An unsaturated hydrogen-containing fluoroolefin compound is obtained by bringing an unsaturated fluorine-containing halogen compound into contact with 0.1 to 3 molar equivalents of hydrogen relative to the unsaturated fluorine-containing halogen compound in a vapor phase in the presence of a supported palladium catalyst in which an amount of supported palladium is 0.1% by weight to 2.5% by weight.

Method for producing hydrogen-containing fluoroolefin compound

Growing community of inventors

Tokyo, Japan

Takefumi Suzuki