Sharp Kabushiki Kaisha Corporation

Innotech Corporation

Takefumi Konishi

Kazuhiro Kawajiri

A solid-state imaging apparatuscomprises: photoelectric conversion elements PDand PDformed within a first conductivity type semiconductor substrate; and transfer transistors Ttand Ttformed on a first main surface of the semiconductor substrate, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrodeof each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region, which configures each of the photoelectric conversion elements PDand PD. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.

Solid-state imaging apparatus for converting incident light entered from one surface into electrical signals on another surface

A solid-state image capturing element includes, disposed in a surface portion from an upper part of the photodiode region to the electric charge detecting section: a second conductivity type first region; a second conductivity type second region; and a second conductivity type third region, one end of which is adjacent to the second conductivity type second region and the other end of which is adjacent to the electric charge detecting section, where each impurity concentration of the first, second and third regions is set in a manner to form an electric field being directed from the second conductivity type first region through the second conductivity type second region to the second conductivity type third region.

Solid-state image capturing element and driving method for the same, method for manufacturing solid-state image capturing element, and electronic information device

A solid-state image capturing apparatus is provided, where each of the pixels comprises a pixel light receiving section for converting incident light into a signal charge by photoelectric conversion, a charge storing section for storing the signal charge and generating a signal voltage in accordance with the stored signal charge, and an amplifying transistor for amplifying and outputting the signal voltage. A second-conductivity type semiconductor region, in which the amplifying transistor is formed, on the semiconductor substrate has an impurity concentration profile different from an impurity concentration profile of a different second-conductivity type semiconductor region, in which a peripheral circuit transistor that constitutes the peripheral circuit is formed.

Solid-state image capturing apparatus, manufacturing method for the solid-state image capturing apparatus, and electronic information device

A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.

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Hiroshima, Japan

Takefumi Konishi