Mitsubishi Denki Kabushiki Kaisha

Takefumi Itou

Kimio Hashizume

Kenji Kubozono

Shinichi Iwase

Takashi Nakajima

Keizo Kitakaze

Takashi Nakagima

A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities. The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.

Copper Ni-Si-P alloy for an electronic device

An improved method for producing a copper alloy, wherein a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, and a remainder of Cu and unavoidable impurities (or a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, 0.03 to 0.5% by weight of Zn, and a remainder of Cu and unavoidable impurities) is quenched to solidify, at a cooling rate in the range from 10.sup.2 .degree. C./sec. to 10.sup.5 .degree. C./sec., and continuously cooling in succession said solidified metal to a normal temperature, to cause an intermetallic compound of Ni-P and Ni-Si to be finely and uniformly dispersed into the matrix material.

Process for producing copper alloy

A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg. A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750.degree. C.-950.degree. C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350.degree. C.-500.degree. C., or slowly cooling it at a rate of 4.degree. C./min. or less, or cooling it at a rate of 1.degree. C./min. or more until temperature reaches 500.degree. C. and keeping its temperature for at least one hour in a temperature range of 500.degree. C.-350.degree. C.

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Amagasaki, Japan

Takefumi Itou