Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electronics Corporation

Takayuki Yoshida

Takuma Motofuji

Toshiyuki Fukuda

Kouji Oomori

Naoto Ueda

Hiroaki Fujimoto

Kenichi Matsuda

Ichiro Yamane

Toyoji Chino

Tadaaki Mimura

Yoshiaki Kasuga

Takio Yamashita

Toshio Matsuki

Kenzo Hatada

Takao Ochi

Takashi Otsuka

Tetsuo Ito

Kimihito Kuwabara

Kaoru Inoue

Hiroyuki Sakai

Katsunori Nishii

Masahiro Maeda

Yoshito Ikeda

Takahisa Suzuki

Izuru Nakai

Tetsuo Kawakita

Teruaki Kasai

Shinya Tokunaga

Masazumi Yamazaki

Takaaki Kassai

Mitsumi Itou

Morio Nakamura

Jing-Bo Wang

Yorito Ohta

A laser processing apparatus includes a light source configured to emit laser light; a power supply configured to supply a current to the light source; a deflection unit on an optical path of the laser light and including an optical element configured to change an amount of transmission of the laser light to deflect at least a part of the laser light; an optical separation unit on the optical path of the laser light and being configured to shield higher-order light included in the laser light and deflected by the optical element in the deflection unit, and transmit zero-order light that is included in the laser light and passes through the deflection unit; and a signal synchronization unit configured to control the power supply to selectively turn the current on or off in synchronization with a timing at which the higher-order light is deflected by the optical element.

Laser processing apparatus

A semiconductor laser device includes a heat sink, a submount, a first electrode, an insulating layer, a semiconductor laser element, a connecting portion, and a second electrode. The submount is conductive and on a first region of an upper surface of the heat sink. The first electrode is conductive and on a second region, different from the first region, of the upper surface of the heat sink. The first electrode is electrically connected either to at least part of a side surface of the submount or to an upper surface of the submount.

Semiconductor laser device and method for manufacturing same

A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

Semiconductor device

A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 &#x3bc;m to 120 &#x3bc;m on the light emission surface. The plurality of emitters have a pitch of 295 &#x3bc;m to 305 &#x3bc;m on the light emission surface.

Laser module

A semiconductor laser device of the present disclosure includes a cooling plate, an insulating sheet, a first cooling block, and a first semiconductor laser element. The conductive cooling plate includes a water supply passage and a drain passage. The insulating sheet is provided to the cooling plate, and includes a first through hole connected to the water supply passage and a second through hole connected to the drain passage. A first cooling block is provided to the insulating sheet, includes therein a first tube connected to the first through hole and the second through hole, and is electrically conductive. The first semiconductor laser element is provided to the first cooling block. The first semiconductor laser element includes a first electrode, and a second electrode opposite to the first electrode. The first electrode is electrically connected to the first cooling block, and the cooling plate is at a floating potential.

Semiconductor laser device

The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Semiconductor laser apparatus and method for manufacturing same

All interface pins for transmitting and receiving a signal having a predetermined function of a semiconductor integrated circuit element are formed on an outer periphery of the semiconductor integrated circuit element along one side of the semiconductor integrated circuit element. The one side of the semiconductor integrated circuit element is adjacent to two of sides of a BGA substrate, the two sides being not parallel to the one side. Of balls provided on the BGA substrate, balls electrically connected to the interface pins for transmitting and receiving a signal having a predetermined function are provided between the one side of the semiconductor integrated circuit element and the two sides of the BGA substrate.

Semiconductor device and electronic device

A semiconductor deviceformed on a semiconductor chip substratehas a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor, the circuit blocks being covered on top with a protective filmto protect the circuits. A plurality of bumpsare formed, at least via the protective film, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumpsimpose stresses on the MOS transistors, increasing the mobility of the MOS transistorsand thereby improving the performance of the semiconductor device

A resin molding moldwith a cavityhas a resin injection portfrom which a molding resinis injected toward the cavity, and an air release portfrom which air from the cavityis released during resin injection. Not only the resin injection portbut also the air release portis formed in a top surface portionof the cavity. Thus, even if a resin burr remains in the resin injection portor the air release port, it can be prevented from adhering to an external terminalA provided on a front surface portionof the substrate

Molded semiconductor device, apparatus for producing the same, and method for manufacturing the same

Semiconductor device having circuit blocks in a single crystal layer, and bumps on certain blocks

A production equipment includes a substrateplaced inside and having a plurality of semiconductor elementsmounted thereon, and a resin molding moldhaving a cavity. The moldhas resin injection portsand air release ports. Each of the resin injection portsis formed in a top surface portion of the cavity in the mold in association with the corresponding semiconductor element. Each of the air release portsis formed around each of the resin injection ports

Production equipment of resin molding semiconductor device, method of manufacturing resin molding semiconductor device, and resin molding semiconductor device

A wiring board according to the present invention has a substrate, a plurality of lines provided on the substrate, an interference-preventive conductor layer provided between the lines to have open ends and prevent signal interference between the lines, and a via electrically connected to the interference-preventive conductor layer. The via is provided at a point at which a distance from each of the open ends of the interference-preventive conductor layer is less than one quarter of a wavelength corresponding to a maximum frequency component of harmonic components contained in the signal.

Wiring board and semiconductor device using the same

A method for fabricating a semiconductor device, in which a semiconductor chip having a first surface and a second surface substantially parallel to each other is mounted on a submount such that the first surface faces the submount, includes: a first step of applying resin to at least one of the semiconductor chip and the submount; a second step of applying a pressure to the semiconductor chip and the submount so that the semiconductor chip and the submount are bonded to each other by the resin, resulting in electrical connection therebetween; and a third step of performing at least one of a film formation process, an etching process, a patterning process, and a washing process for the second surface of the semiconductor chip.

Method for fabricating semiconductor device

An image pickup section incorporates a solid-state image pickup element chip. Electronic parts for driving or controlling the image pickup section are mounted on a circuit board. First and second electrode pad groups are formed on the circuit board, and a separation band is also formed on the circuit board between the first and second electrode pad groups. The circuit board is used as it is when the image pickup device is not required to be bendable. When the image pickup device is required to be bendable, the circuit board is separated by cutting it at the separation band and the first and second electrode pad groups that are now respectively located on the separated pieces of the circuit board are connected to each other by signal lines.

Growing community of inventors

Osaka, Japan

Takayuki Yoshida