Adv Antest Corporation

Fujitsu Corporation

Showa Denko K.k.

Fdk Corporation

Asahi Kasei Medical Co., Ltd.

Resonac Corporation

Takayuki Yano

Takashi Yamazaki

Takeshi Ito

Tatsuo Fujimoto

Masaru Kihara

Kazuhito Kamei

Kazuhiko Kusunoki

Shigekazu Yasuoka

Hiroshi Tsuge

Yuzo Imoto

Kazuaki Seki

Yuji Kataoka

Toshinori Koizumi

Shuuichi Doi

Komomo Tani

Yasuko Sato

Ryo Komura

A nickel-hydrogen secondary battery includes an electrode group comprising a separator, a positive electrode, and a negative electrode, and the positive electrode contains a positive electrode active material including a base particle comprising a nickel hydroxide particle containing Mn in solid solution and a conductive layer comprising a Co compound and covering the surface of the base particle, wherein the X-ray absorption edge energy of Mn detected within 6500 to 6600 eV by measurement with an XAFS method is 6548 eV or higher.

Positive electrode active material for alkaline secondary battery and alkaline secondary battery including the positive electrode active material

The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth. The present invention is a method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot, the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 &#x3bc;m to 1 mm and spans of terraces of 200 &#x3bc;m to 1 mm on the growth face of the seed crystal and making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method.

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

A test head moving apparatus includes elevating arms that move a test head up and down, a frame that horizontally moves the test head, and an interlock mechanism that prohibits the horizontal movement of the frame on the basis of a height of the test head. The interlock mechanism has a limit switch that detects that the test head is positioned at the lowermost limit and stoppers capable of pressing the pressing units onto a floor plane.

Test head moving apparatus and electronic component testing apparatus

To provide an efficient sterilization method for inexpensively sterilizing a medical article having a complex shape such as a body fluid treatment device of a generally-called dry or semi-dry type by so applying an electron beam that the overall absorbed dose distribution is small and to provide its application package form. [MEANS FOR SOLVING PROBLEMS] A method for sterilizing tubular body fluid treatment devices of a dry or semi-dry type contained in an electron beam-transmitting case with an electron beam. The method is characterized in that a stack structure which includes a gap layer having an average density of 0.010 to 0.180 g/cmand two body fluid treatment device layers having an average density of 0.050 to 0.200 g/cmand sandwiching the gap layer is contained in the electron beam-transmitting case, and the case is irradiated with the electron beam.

Electron beam sterilization method

IC test-head stand

Growing community of inventors

Tokyo, Japan

Takayuki Yano