Canon Kabushiki Kaisha

Nissan Motor Company Limited

University of Yamanashi

Fujitsu Quantum Devices Limited

National Institute of Advanced Industrial Science and Technology

Other

Hitachi, Ltd.

Ihi Corporation

Tokyo Institute of Technology

Fujitsu Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Kyoto University

Tokyo University of Science Foundation

Takayuki Watanabe

Nobuhiro Kumada

Takuya Fujii

Takanori Matsuda

Takashi Iijima

Satoshi Wada

Taro Hasegawa

Bong-Yeon Lee

Hiroyuki Sakaniwa

Yasuhiro Ebihara

Tsutomu Michitsuta

Toshihiro Ifuku

Kenji Takashima

Hiroshi Funakubo

Keisuke Yamato

Satoshi Shinada

Tsuyoshi Yamamoto

Satoshi Yamanaka

Yasumichi Suzuki

Katsuhiko Kimura

Masao Sakata

Shigeru Kobayashi

Hideo Mukai

Kaoru Miura

Masahiro Tsukamoto

Susumu Aiuchi

Hirohiko Kobayashi

Tsuneaki Kamei

Yoshitsugu Nakatomi

Hajime Shoji

Koichi Kinoshita

Masaki Azuma

Seiichi Kato

Mamoru Higuchi

Soichiro Okamura

Yoshiyuki Eto

Tsuyoshi Ueno

Hiroyasu Yoshida

Naoki Oiwa

Hideaki Shimamura

Takeshi Kawana

Minoru Maruyama

Takao Mifune

Hideki Tateishi

Rie Sakamoto

Masanori Yoshizaki

Yoshihiro Satoh

Takashi Yonezawa

Tatsuo Sunouchi

Tadafumi Kanayama

Shinichi Tsuyuki

Hiroaki Ito

Fumihito Ichikawa

Kanji Higuchi

Akira Kiribe

Hitoshi Tanaka

Takaaki Konuma

Hiromasa Okayasu

In a friction stir welding apparatus, workpiece fixing surface plates () are installed on a framework (). In addition, a welding apparatus main body () including a bobbin tool () having a probe () protruding upward from a gap (), a spindle () configured to attach the bobbin tool () to an upper end section thereof, and a spindle driving apparatus () configured to pivot the spindle () is movably installed at the framework () in a longitudinal direction of the gap () via linear guide mechanisms () installed at both sides of the welding apparatus main body (). Further, a moving apparatus () is installed to move the welding apparatus main body () in the longitudinal direction of the gap (). According to the friction stir welding apparatus, since the welding apparatus main body () is supported by the framework () via both of the linear guide mechanisms (), a large welding reaction force can be sufficiently received. In addition, since workpieces () are welded from a lower side, the workpiece size is not limited by a size of the apparatus.

Friction stir welding apparatus

An offset printing apparatus includes a frame; guide rails that are provided on the frame; a plurality of guide blocks that are provided on the guide rails; a plate table that travels via one portion of the guide blocks among the plurality of guide blocks; a print target table that travels via another portion of the guide blocks among the plurality of guide blocks; and a blanket roll that is provided on the frame; wherein transfer from the plate to the blanket roll, and retransfer from the blanket roll to the print target are performed by causing the blanket roll to successively make contact from above with a plate that is held on the plate table, and a print target that is held on the print target table; a step portion for positioning that consists of a vertical surface that is formed by a machining process so that the linearity increases and a horizontal surface is provided at mounting locations of the guide rails on the upper surface portion of the frame; and one side surface and the bottom surface of the guide rails are pressed against the vertical surface and the horizontal surface of the step portion, respectively, to be fixed.

Offset printing apparatus which can attain high positional accuracy

Provided is an oriented piezoelectric material with satisfactory sintering property free of Pb that is a hazardous substance, and a water-soluble alkaline ion, and a production method therefor. To this end, provided is a compound, including a tungsten bronze structure metal oxide, in which: the tungsten bronze structure metal oxide contains at least metal elements of Ba, Bi, Ca, and Nb, the metal elements satisfying the following conditions in terms of molar ratio; and has a C-axis orientation. The compound shows Ba/Nb=a: 0.363&#x3c;a&#x3c;0.399, Bi/Nb=b: 0.0110&#x3c;b&#x3c;0.0650, and Ca/Nb=c: 0.005&#x3c;c&#x3c;0.105. The tungsten bronze structure metal oxide preferably includes (1&#x2212;x).CaBaNbO&#x2212;x.BaBiNbO(0.30&#x2266;x&#x2266;0.95).

Piezoelectric material and production method therefor

To provide a piezoelectric ceramic containing BiFeOhaving a {110} plane orientation in a pseudo-cubic form, which is suited for the domain engineering, the piezoelectric ceramic includes a perovskite-type metal oxide represented by the following general formula (1), and has a {110} plane orientation in a pseudo-cubic form:BiFeO-(1&#x2212;)ABO&#x2003;&#x2003;General Formula (1)where A and B each represent one kind or more of metal ions; A represents a metal ion having a valence of 1, 2 or 3; and B represents a metal ion having a valence of 3, 4, or 5, provided that x is within a range of 0.3&#x2266;x&#x2266;1.

Ceramic, piezoelectric device, and production method thereof

Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by ABOand A'B&#x2032;Oare combined to form a morphotropic phase boundary has good piezoelectric property. The ABOis b(BaBiNbO)+(1&#x2212;b)(BaAgNbO) (0&#x2266;b&#x2266;1 and 0&#x3c;&#x3b1;&#x2266;0.4), and the A&#x2032;B&#x2032;Ois c(SrNbO)+d(CaNbO)+e(BaNbO) (0&#x2266;c&#x2266;0.8, 0&#x2266;d&#x2266;0.4, 0.1&#x2266;e&#x2266;0.9, and c+d+e=1).

Piezoelectric material

Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150&#xb0; C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(MgTi)O-(1-x)BaTiO(1), where x satisfies 0.17&#x2266;x&#x2266;0.8, in which an average grain size of grains contained in the sintered body is 0.5 &#x3bc;m or larger to 10 &#x3bc;m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

Piezoelectric material, method of manufacturing the same, and piezoelectric device

Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150&#xb0; C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1):Bi(MgTi)O-(1-)BaTiO&#x2003;&#x2003;(1),where x satisfies 0.17&#x2266;x&#x2266;0.8, in which an average grain size of grains contained in the sintered body is 0.5 &#x3bc;m or larger to 10 &#x3bc;m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1):ABiBB'ON&#x2003;&#x2003;(1),where A represents a divalent element, B and B&#x2032; each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and &#x3b4;1 and &#x3b4;2 each represent a numerical value of &#x2212;0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B&#x2032; each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Oxynitride piezoelectric material and method of producing the same

A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

Process of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.

Method of manufacturing semiconductor device and method of manufacturing optical wave guide

An n type InP buried layer with Se or S added in an above 5&times;10 cm concentration is formed on an active layer mesa stripe having a surface with an SiO film formed on at a peripheral part of the mesa stripe other than the surface with the SiO film formed on. Accordingly, the buried layer can be grown without the over growth.

Method for fabricating semiconductor device

There is provided a semiconductor laser which comprises a first cladding layer formed of compound semiconductor having first conductivity type impurity and having a mesa-shaped projection, an active layer formed on the projection like a stripe and having side surfaces which are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer, buried layers formed on both sides of the projection and having second conductivity type impurity, current blocking layers each having one end which contacts a virtual surface obtained by extending upward a side surface of the active layer and having a first facet which extends downward from the one end and is inclined by about 55 degrees relative to the upper surface of the first cladding layer and formed on each buried layer and having the first conductivity type impurity, and second cladding layers formed on the current blocking layers and the active layer and having the second conductivity type impurity.

Semiconductor laser and method of manufacturing the same

A road information generating apparatus has a stored digitized map database having data identifying roads on a route. The roads of the map database are stored as road segments each having endpoints. The apparatus cancels data defining selected road segments that fall outside of a predetermined window about a predetermined circle approximating a predetermined road curve. The apparatus determines circles each approximating a portion of unselected road segments. The apparatus compares a radius of each of the circles with a predetermined radius value. The apparatus produces road information on acute curve in response to result of comparing the radius of each curve with the predetermined radius value.

Apparatus for generating road information from stored digital map database

Growing community of inventors

Yokohama, Japan

Takayuki Watanabe