Canon Kabushiki Kaisha

University of Yamanashi

Mitsui Toatsu Chemicals, Incorporated

Tokyo Institute of Technology

Sumitomo Electric Device Innovations, Inc.

Sophia School Corporation

Ntt Docomo, Inc.

Takayuki Watanabe

Shunsuke Murakami

Jumpei Hayashi

Makoto Kubota

Miki Ueda

Takanori Matsuda

Tatsuo Furuta

Hidenori Tanaka

Hisato Yabuta

Koji Suzuki

Kaoru Miura

Nobuhiro Kumada

Toshihiro Ifuku

Kanako Oshima

Akira Uebayashi

Shinya Koyama

Hiroshi Ezawa

Hiroaki Tsushima

Kenichi Takeda

Hiroshi Uchida

Hiroshi Funakubo

Toshiaki Aiba

Shintaro Yasui

Zyuzo Nishiba

Jun-ichi Nagata

Yasushi Shimizu

Satoshi Wada

Hitoshi Nishitani

Satoshi Fujita

Hidehiko Oyane

Kazuhiro Yamaji

Mikio Shimada

Tomoaki Yamada

Keisuke Yazawa

Yuki Iitsuka

Seishiro Maruyama

Masatsugu Yoshida

Tomoaki Masubuchi

Takahiro Oikawa

The present invention provides a vibrator made of a non-lead-based piezoelectric material and capable of being driven at a sufficient speed with low power consumption, and provides a vibration wave drive device and an electronical device each using the vibrator. To that end, the vibrator according to the present invention includes a piezoelectric element including a piezoelectric material and electrodes, and an elastic body, wherein a Pb component contained in the piezoelectric material is less than 1000 ppm, and a resonance frequency fin a vibration mode A and a resonance frequency fin a vibration mode B satisfy a relation of an absolute value of (f&#x2212;f)&#x3e;2 (kHz), the vibration mode A and the vibration mode B generating vibration waves in the elastic body with wave fronts of the vibration waves intersecting each other.

Vibrator, vibration wave drive device, vibration wave motor, and electronical device

Provided is a method of manufacturing a piezoelectric element in which, at a time when the piezoelectric element is manufactured, a piezoelectric material is prevented from being exposed to a temperature higher than a Curie temperature thereof to be depolarized, to thereby significantly decrease piezoelectric properties. The method of manufacturing a piezoelectric element includes a first step of arranging a plurality of electrodes on a piezoelectric material, electrically short-circuiting two or more electrodes of the plurality of electrodes, and subjecting the piezoelectric material to heat treatment, and a second step of, after the first step, electrically opening the short circuit of the two or more electrodes at a time when a temperature of the piezoelectric material decreases to less than a temperature of the piezoelectric material at a time of the heat treatment.

Method of manufacturing piezoelectric element, method of manufacturing oscillatory wave motor, method of manufacturing optical apparatus, and method of manufacturing electronic apparatus

A manufacturing method for an optical semiconductor device includes: forming a first semiconductor layer; forming a first mask pattern on the first semiconductor layer in a first area where an electro absorption type modulator is formed; forming an unevenness along the first direction on the first semiconductor layer; forming a second semiconductor layer on the unevenness; and forming an optical waveguide layer on the second semiconductor layer. The first mask pattern includes a first pattern in the first area and a second pattern in a second area where a DFB laser is formed, the first pattern including a first opening pattern and a first cover pattern, and the second pattern including a second opening pattern and a second cover pattern, and a ratio of the first opening pattern to the first cover pattern is different from that of the second opening pattern to the second cover pattern.

Optical semiconductor device and manufacturing method thereof

Provided is a method of manufacturing an oscillator, including: arranging an electrode on a piezoelectric ceramics free from being subjected to polarization treatment, to thereby provide a piezoelectric element; bonding the piezoelectric element and a diaphragm to each other at a temperature T; bonding the piezoelectric element and a power supply member to each other at a temperature T; and subjecting the piezoelectric ceramics to polarization treatment at a temperature T, in which the temperature T, the temperature T, and the temperature Tsatisfy a relationship T&#x3e;Tand a relationship T&#x3e;T

Method of manufacturing an oscillator

A vibrator which is constructed by bonding a piezoelectric element and an elastic body together via a bonding layer. The piezoelectric element has a piezoelectric ceramic and electrodes. The bonding layer has an unbonded region that is located close to a nodal line of a vibration in a primary out-of-plane vibration mode when the vibration is excited in the vibrator, and in the unbonded region, the piezoelectric element and the elastic body are not bonded together.

Vibrator with low power consumption, vibration type actuator, and electronic apparatus

A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L&#x2212;L)/L&#x2265;0.05 and (L&#x2212;L)/L&#x2265;0.05 when the lengths of twelve Bi&#x2014;O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be Lto Lin length order:(BaM1)(TiM2)O&#x2003;&#x2003;(1)wherein 0&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

Piezoeletric material, piezoelectric element, liquid discharge head, liquid discharge apparatus, vibration wave motor, optical instrument, vibration apparatus, dust removing apparatus, imaging apparatus and electronic device

The present invention provides a piezoelectric material not containing lead and potassium, showing satisfactory insulation and piezoelectricity, and having a high Curie temperature. The invention relates to a piezoelectric material includes a main component containing a perovskite-type metal oxide represented by Formula (1): (NaBa)(NbTi)O(wherein, 0.80&#x2264;x&#x2264;0.94 and 0.83&#x2264;y&#x2264;0.94), and an additive component containing at least one element selected from Mn and Ni, wherein the content of the Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of the Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide.

Piezoelectric material, piezoelectric element, and electronic apparatus

This invention is a method for manufacturing a rectangular parallelepiped-shaped single crystal containing sodium niobate of a perovskite structure as the main component, and the method includes a process of heating a mixture 1 of bismuth sodium niobate which is formed from particles containing a plurality of crystals represented by General Formula (1): BiNaNbmO(m is an integer of 2 or more) and in which an average value mof the m values is larger than 6 and sodium containing alkali metal halide at 1200&#xb0; C. or more and 1250&#xb0; C. or less to obtain a rectangular parallelepiped-shaped single crystal containing sodium niobate as the main component.

Method for manufacturing rectangular parallelepiped-shaped single crystal, rectangular parallelepiped-shaped single crystal, method for manufacturing ceramics, ceramics, piezoelectric element, piezoelectric device, and electronic device

There are provided a lead- and potassium-free piezoelectric material that has a high Curie temperature and a high mechanical quality factor and is stable in long-term driving and a piezoelectric element including the lead- and potassium-free piezoelectric material. A piezoelectric material containing a perovskite-type metal oxide having the general formula (1): NaBaNbZrOwherein x satisfies 0.85&#x2264;x&#x2264;0.96 and y satisfies 0.90&#x2264;y&#x2264;0.96 and a piezoelectric element including the piezoelectric material. The piezoelectric material may include the perovskite-type metal oxide and Cu, and the Cu content corresponds to 2.00 mol % or less of the amount of the perovskite-type metal oxide.

Piezoelectric material, piezoelectric element, and electronic equipment

A barium titanate piezoelectric ceramic having good piezoelectric properties and mechanical strength and a piezoelectric element that includes the ceramic are provided. A method for making a piezoelectric ceramic includes forming a compact composed of an oxide powder containing barium titanate particles, sintering the compact, and decreasing the temperature of the compact after the sintering. The sintering includes (A) increasing the temperature of the compact to a first temperature within a temperature range of a shrinking process of the compact; (B) increasing the temperature of the compact to a second temperature within a temperature range of a liquid phase sintering process of the compact after (A); (C) decreasing the temperature of the compact to a third temperature within the temperature range of the shrinking process of the compact after (B); and (D) retaining the third temperature after (C).

Piezoelectric ceramic, method for making the same, piezoelectric element, liquid discharge head, ultrasonic motor, and dust cleaner

The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), at least one of Mn and Ni, and Mg. The content of Ni is 0 mol or more and 0.05 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mn is 0 mol or more and 0.005 mol or less based on 1 mol of the perovskite-type metal oxide, provided that the content of Mn and the content of Ni are not simultaneously 0 mol. The content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaBa)(NbTi)O(where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

Piezoelectric material, method of producing piezoelectric material, piezoelectric element, and electronic apparatus

The piezoelectric material of the present invention includes a main component composed of a perovskite-type metal oxide represented by Formula (1), Zn, and Mg. The content of Zn is 0.005 mol or more and 0.050 mol or less based on 1 mol of the perovskite-type metal oxide, and the content of Mg is 0.001 mol or more and 0.020 mol or less based on 1 mol of the perovskite-type metal oxide. Formula (1): (NaBa)(NbTi)O(where x is 0.83 or more and 0.95 or less, y is 0.85 or more and 0.95 or less, and x/y is 0.95 or more and 1.05 or less).

The present invention can provide a lead-free piezoelectric material having a high piezoelectric constant in the room temperature range. The present invention for this purpose is a piezoelectric material including a main component containing a perovskite metal oxide represented by following general formula (1),Ba(TiZr)O&#x2003;&#x2003;(1)where 0.02&#x2264;x&#x2264;0.13 and 0.986&#x2264;a&#x2264;1.02, a first auxiliary component containing Mn, and a second auxiliary component containing trivalent Bi, wherein an amount of the contained Mn is 0.0020 moles or more and 0.0150 moles or less relative to 1 mole of the metal oxide, and an amount of the contained Bi is 0.00042 moles or more and 0.00850 moles or less relative to 1 mole of the metal oxide.

Piezoelectric material, piezoelectric element, method for manufacturing piezoelectric element, and electronic device

A semiconductor laser diode type of a buried-hetero structure (BH-LD) is disclosed. The LD provides a mesa, a first burying layer, and a second burying layer, where the burying layers are provided in respective sides of the mesa so as to expose a top of the mesa. The mesa includes a lower cladding layer, an active layer, and an upper cladding layer, where the cladding layers have conduction type opposite to each other and, combined with the burying layers, constitute a carrier confinement structure. The second burying layer has an even surface overlapping with an even surface of the first burying layer, and has a thickness in a portion of the even surface that is thinner than a thickness thereof in a portion except for the even surface.

Process of forming semiconductor optical device and semiconductor optical device

Piezoelectric material piezoelectric element and electronic apparatus

Growing community of inventors

Yokohama, Japan

Takayuki Watanabe