Kokusai Electric Corporation

Takayuki Waseda

Kimihiko Nakatani

Yoshitomo Hashimoto

Motomu Degai

Takashi Nakagawa

Shoma Miyata

Takao Izaki

Hiroshi Ashihara

There is provided a technique that includes (a) forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature; (b) heat-treating the film under a second temperature higher than the first temperature; (c) altering the heat-treated film by exposing the heat-treated film to an altering agent; and (d) removing the altered film by exposing the altered film to a removing agent.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium

There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique that includes: (a) forming an inhibitor layer on a surface of a first material of a concave portion provided on a surface of a substrate, by supplying a precursor to the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion being composed of the first material containing a first element and a second material containing a second element different from the first element; (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the inhibitor layer formed on the surface of the first material; and (c) forming a hydroxyl group termination on the surface of the first material before performing (a).

A technique includes: (a) providing a substrate having a first surface and a second surface; (b) modifying the first surface to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate; and (c) forming a film on the second surface by supplying a precursor and an oxygen- and hydrogen-containing gas to the substrate after modifying the first surface.

Method of processing substrate and method of manufacturing semiconductor device by forming film

There is method of processing a substrate comprising: (a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and (c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Methods of processing substrate and manufacturing semiconductor device by forming film, substrate processing apparatus, and recording medium

There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) modifying a surface of one base among a first base and a second base to be F-terminated by supplying a fluorine-containing radical generated from a fluorine-containing gas to a substrate where the first base and the second base are exposed at a surface of the substrate; and (b) forming a film on a surface of the other base, which is different from the one base, among the first base and the second base by supplying a film-forming gas to the substrate after modifying the surface of the one base.

There is provide a technique that includes: etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Growing community of inventors

Toyama, Japan

Takayuki Waseda