Canon Kabushiki Kaisha

Fujitsu Corporation

Fujitsu Semiconductor Limited

Takayuki Wada

Daisuke Matsunaga

Yoshihiro Takao

Masanori Terahara

Hikaru Kokura

Junji Oh

Shinji Sugatani

Koichi Sugiyama

Tohru Fujita

Mitsuaki Hori

Shinnosuke Torii

Masataka Kase

Kenichi Hikazutani

Manabu Nakamura

Toshiki Miyake

Yoshikazu Kataoka

A display control apparatus includes a viewfinder including an eye contacting portion and an internal display unit, an eye approaching detection unit, a mode switching unit which selects one of a plurality of operation modes including first and second operation modes, and a control unit which performs control such that an on state of the internal display unit is changed to an off state based on detection, by the eye approaching detection unit, of an object which moves away from the eye contacting portion to a position at or further than a first distance from the eye contacting portion in the first operation mode, and the on state is changed to the off state based on detection, by the eye approaching detection unit, of an object which moves away from the eye contacting portion to a position at or further than a second distance, which is larger than the first distance, from the eye contacting portion in the second operation mode.

Display control apparatus, method for controlling the same, and storage medium

An image capturing apparatus includes an image capturing unit, a recording control unit configured to perform control to record an image captured by the image capturing unit on a recording medium, a display unit configured to display the image, a detection unit configured to detect information about ambient brightness of the image capturing apparatus, and a control unit configured to perform control to change brightness of the display unit based on a detection result by the detection unit, wherein the control unit performs control so as not to change the brightness of the display unit based on the detection result by the detection unit while the image is recorded on the recording medium.

Image capturing apparatus, method for controlling image capturing apparatus, display control apparatus, and method for controlling display control apparatus

A panel unit that reduces the influence of static electricity applied to a panel member forming a display surface without increasing the size of an electronic apparatus. The panel unit has a touch panel and an FPC including connection sections which are electrically connected to interconnection sections of the touch panel, and is provided with signal lines and a ground interconnection. The FPC includes conductor-exposed portions each provided between the connection sections connected to the interconnection sections and an outer part of the touch panel. The conductor-exposed portions are configured to be prevented from being electrically conducted to the signal lines, and be electrically conducted to the ground interconnection.

Panel unit that reduces influence of static electricity, and electronic apparatus

A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

Method for manufacturing semiconductor device

There are provided a gate electrode formed on a semiconductor substrate of one conductivity type via a gate insulating film, ion-implantation controlling films formed on both side surfaces of the gate electrode and having a space between the gate electrode and an upper surface of the semiconductor substrate, first and second impurity diffusion regions of opposite conductivity type formed in the semiconductor substrate on both sides of the gate electrode and serving as source/drain, a channel region of one conductivity type formed below the gate electrode between the first and second impurity diffusion regions of opposite conductivity type, and pocket regions of one conductivity type connected to end portions of the impurity diffusion regions of opposite conductivity type in the semiconductor substrate below the gate electrode and having an impurity concentration of one conductivity type higher than the channel region.

Semiconductor device and method of manufacturing the same

A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.

Semiconductor device having a shallow junction and a fabrication process thereof

Growing community of inventors

Kawasaki, Japan

Takayuki Wada