Kyoto University

Toshiba Mitsubishi-electric Industrial Systems Corporation

Flosfia Inc.

Kochi Prefectural Public University Corporation

Eyetec Co., Ltd.

Takayuki Uchida

Shizuo Fujita

Toshimi Hitora

Takahiro Hiramatsu

Hiroyuki Orita

Kentaro Kaneko

Toshiyuki Kawaharamura

Masaya Oda

Shingo Yagyu

Takashi Tanaka

Masafumi Ono

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.

Metal oxide film formation method

An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0&#xd7;10mol/dmat pH3 and having a temperature of 25&#xb0; C., an anode current density that is 1&#xd7;10A/cmor less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.

Electrically-conductive member and method of manufacturing the same

A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 &#x3bc;m or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 &#x3bc;m or less in film thickness with carrier density that is 1&#xd7;10/cmor less and electron mobility that is 1 cm/Vs or more.

Semiconductor film, method of forming semiconductor film, complex compound for doping, and method of doping

Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.

Growing community of inventors

Kyoto, Japan

Takayuki Uchida