Sony Corporation

Takayuki Toyama

Ryoji Suzuki

Atsushi Suzuki

Noriyuki Fukushima

Hideyuki Matsumoto

Hayato Wakabayashi

Naohiro Koshisaka

Yukihiro Yasui

Tatsuya Sugioka

Tatsuo Shinbashi

Hiroki Kihara

Kenichi Maruko

Kazuhisa Funamoto

Hiroshi Shiroshita

Koji Mishina

Miho Ozawa

Hiroyuki Tsuchiya

Shigetoshi Sasaki

Masato Tamori

Tomonori Mori

Hiroyuki Iwaki

Takamasa Wada

A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.

Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus

An image pickup element includes a plurality of read signal lines; a pixel unit in which a plurality of pixel circuits are arranged in a matrix form, the plurality of pixel circuits in the pixel unit being divided into groups of pixel circuits so that each of the groups is provided in a corresponding one of columns, each of the groups of pixel circuits being connected to a corresponding one of the plurality of read signal lines; and a processing unit configured to process read signals that the plurality of pixel circuits, which are divided into groups, output to the plurality of read signal lines, which are connected to the plurality of pixel circuits.

CMOS image sensor with fast read out

An image outputting apparatus includes a header production section for producing a header including header information formed from first and second frame information regarding whether pixel data included in a payload are of first and last lines of one frame, respectively, first line information regarding whether or not the pixel data included in the payload are valid, and second line information regarding a line number of a line formed from the pixel data included in the payload, and an error detection code for use for detection of an error of the header information. A packet production section produces a packet which includes, in the payload thereof, pixel data for one line which configure an image obtained by imaging by an imaging section and to which the header is added. An outputting section outputs the produced packet to an image processing apparatus.

Image outputting apparatus, image outputting method, image processing apparatus, image processing method, program, data structure and imaging apparatus

The present disclosure provides an image outputting apparatus, including, an image pickup section, an error correction code calculation section adapted to calculate an error correction code using pixel data, which configure an image obtained by image pickup by the image pickup section, as an information word, and an outputting section adapted to output coded data, which are data of a codeword obtained by adding the error correction code to the pixel data, to an image processing apparatus provided in an apparatus in which the image outputting apparatus is provided.

Image outputting apparatus, image outputting method, image processing apparatus, image processing method, program, and image pickup apparatus

A solid-state imaging device includes: a pixel section formed by pixels performing photoelectric conversion arranged in a matrix; a pixel signal readout section capable of column-parallel processing including an A/D conversion function for reading out a pixel signal from the pixel section and performing analog-digital conversion of the signal, the pixels being read in groups; a voltage sampling section sampling a bias voltage generated by an internal or external voltage generating circuit for a period in accordance with a control signal and supplying the sampled bias voltage to the pixel signal readout section; and a control section controlling the signal readout operation of the pixel signal readout section and the voltage sampling operation of the voltage sampling section. The pixel signal readout section includes a functional portion. The control section exercises control such that the voltage sampling operation is performed in a period other than at least either of a period in which an analog signal is read out or in which A/D conversion is carried out.

Solid-state imaging device, method of driving the device, and camera system with varied timing of sampling period for sampling a bias voltage during pixel readout

A physical quantity distribution detecting apparatus includes a sensor array in which a plurality of unit sensors for sensing physical quantity are two-dimensionally arranged in a matrix; and an analog-to-digital conversion unit that includes a plurality of comparators for comparing an analog signal read from the unit sensor with a reference signal, the analog-to-digital conversion unit converting a digital signal by measuring a period of time or measuring a signal corresponding to the period of time of each comparison output of the plurality of comparators. Each of the plurality of comparators includes at least one capacitor element connected between a signal line and a constant-voltage line.

Physical quantity distribution detecting apparatus and imaging apparatus

A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

Semiconductor device and process for production thereof

Method of manufacturing a semiconductor device having a channel layer, a first semiconductor layer and a second semiconductor layer with a conductive impurity region

Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region

In order to reduce a contact resistance of an electrode of a semiconductor device, a metal layer is directly formed on a source area and a drain area so as to form a source electrode and a drain electrode without providing a cap layer thereunder. Consequently, a step for removing the cap layer can be eliminated, simplifying the manufacturing process for the semiconductor device.

Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer

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Kanagawa, Japan

Takayuki Toyama