Nippondenso Co., Ltd.

Nippon Soken, Inc.

Takayuki Tominaga

Tadashi Hattori

Nobuyoshi Sakakibara

Michio Hisanaga

Minoru Ohta

Takashi Kaneko

Takaharu Idogaki

Naohito Mizuno

Yoshitaka Gotoh

Mitutaka Katada

Kenichi Hanaki

Kouji Senda

Hitoshi Kanayama

Hitomi Kitagawa

A moving member 2 is rotatably and slidably arranged in a holder 11 having a spherical inner surface 11a. An inertia body 5 is connected to the moving member 2 via a supporting member 4. At a location opposite the inertia body 5, an arm 3 extends so that it is directed outwardly via an opening of the holder. A piezo electric actuator 63 is arranged between the rotating member 2 and the supporting member 4. An elongation of the actuator causes a relative swing movement between the inertia body 5 and moving member to occur in one direction such that a reaction force in the moving member 2 due to the inertia of the inertia body 5 exceeds the frictional force between the moving member 4 and the holder 11, which allows the moving member 4 to be displaced with respect to the holder 11. A contraction of the actuator causes a relative movement between the inertia body 5 and moving member to occur in the opposite direction such that a reaction force in the moving member 2 does not exceed the frictional force, which allows the inertia body to follow with the actuator 63. A reception of the elongation and the contraction allows a movement of the moving member to occur so that it exceeds the limit of the bonding movement of the actuator.

Articulation device

A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.

Fine structure forming device

An electrode for electrical discharge machining. This spark-machining electrode improves the accuracy at which the workpiece is machined by electrical discharge machining. The electrode can dispense with a mechanism which scans the spark-machining electrode or the workpiece. A plurality of needlelike electrodes are formed on the surface of the spark-machining electrode. The needlelike electrodes are so arranged that they are present in craters created by their respective adjacent needlelike electrodes. The plural electrodes form a group. The shape of the surface of this group is formed according to the desired shape to be formed in the workpiece. Art electric discharge occurs mainly at the tips of the needlelike electrodes and so the capacitance is smaller than the capacitance of the prior art flat-plate electrode. Also, the energy of a single electric discharge can be reduced. Furthermore, electric discharge at the side surfaces of the needlelike electrodes can be suppressed because of the effect of concentration of electric field.

Electrical discharge machine

A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.

Method for forming silicon carbide semiconductor film

In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.

Semiconductor device

Growing community of inventors

Chiryu, Japan

Takayuki Tominaga