Panasonic Corporation

Daikin Industries, Ltd.

Matsushita Electric Industrial Co., Ltd.

Osaka University

Takayuki Tanaka

Toshiki Mori

Yoshifumi Nakamura

Seiji Yamahira

Nozomi Shimoishizaka

Yasuhiro Tomita

Keisuke Sakai

Kouichi Nagao

Michiharu Torii

Makoto Matsumoto

Taku Yamanaka

Masayoshi Tatemoto

Takahiro Taira

Akihiro Oshima

Chiaki Okui

Hiroyuki Imamura

Satoshi Tokuno

Hideki Nakaya

Kazuyuki Satoh

Junichi Ueno

Masayoshi Miyamoto

Michinari Tetani

Takafumi Kikuchi

Nobuyuki Koutani

Kazuhiro Mishima

Teruo Kido

Tomonori Kikuno

Shinichirou Kobayashi

Yasuhiro Utsumi

Tetsuro Yoshimoto

Miki Mizushima

Ryosuke Senba

Ryouichi Sugita

Provided is a method for producing low-molecular-weight polytetrafluoroethylene which is less likely to generate C6-C14 perfluorocarboxylic acids and salts thereof. The disclosure relates to a method for producing low-molecular-weight polytetrafluoroethylene having a melt viscosity at 380&#xb0; C. of 1.0&#xd7;10to 7.0&#xd7;10Pa&#xb7;s. The method includes (1) irradiating high-molecular-weight polytetrafluoroethylene with radiation in a substantially oxygen-free state and decomposing the high-molecular-weight polytetrafluoroethylene into a low-molecular-weight component and (2) deactivating, in a substantially oxygen-free state, at least part of main-chain radicals and end radicals generated by the irradiation and providing the low-molecular-weight polytetrafluoroethylene.

Method for producing low-molecular-weight polytetrafluoroethylene

A method for producing a polytetrafluoroethylene powder, which includes applying an ultrasonic wave to a polytetrafluoroethylene aqueous dispersion containing polytetrafluoroethylene particles to coagulate the polytetrafluoroethylene particles.

Method for producing polytetrafluoroethylene powder

Disclosed is a nonvolatile storage system including: a memory block having a plurality of flash memories; a flash memory power supply circuit outside of the memory block; and a flash memory controller. The flash memory power supply circuit has a plurality of types of power supply circuits for process execution, the power supply circuits for process execution generating and supplying power at a plurality of voltage levels needed to execute processes in the flash memories. The flash memory controller monitors changes of the internal states of the flash memories by communicating with the flash memories, thereby controlling the power supply circuits for process execution and the flash memories.

Voltage control circuit for providing two voltages generated based on a parameter corresponding to an input signal

Process execution control based on the internal states of flash memories and power supply circuit information

A former unit () as a drying apparatus includes a horizontally oriented main casing (). Space inside the main casing () is divided into four irradiation zones (-). Each of the irradiation zones (-) contains one tray unit (). Each of the tray units () contains four metallic transfer trays () aligned in the vertical direction, with a distance between the transfer trays () set to half a wavelength of a microwave (&#x3bb;/2) or larger. Each of the transfer trays () carries wet PTFE powder. In the irradiation zones (-), the tray units () sequentially move from the first irradiation zone () to the fourth irradiation zone (), and the microwave is laterally applied to the transfer trays ().

Drying apparatus

A semiconductor device is configured such that an electrode pad connected to an internal circuit is formed on a surface of a semiconductor substrate, wires are formed near and around the electrode pad, a protective film is formed which covers the edge of the electrode pad, the wires, and the surface of the semiconductor substrate, and a metal bump is formed on the electrode pad such that the edge of the electrode is disposed on the protective film on the wires. According to this configuration, since the wires are formed near the electrode pad, the protective film covering the edge of the electrode pad and an area around the edge is formed relatively flat, and the metal bump has a flat surface on a convex portion formed on the relatively flat protective film. Therefore, even when the electrode pad is small, a flat area can be sufficiently obtained on the surface of the metal bump, thereby obtaining stable connection via an anisotropic conductive sheet or the like by COG.

Semiconductor device and method of manufacturing the same

A flexible insulating base, a plurality of conductor wirings aligned on the flexible insulating base, and bump electrodes provided respectively in end portions of the plurality of conductor wirings in a region where a semiconductor chip is to be placed are provided. The semiconductor chip is mounted on the conductor wirings by bonding electrode pads formed on the semiconductor chip to the bump electrodes. An auxiliary conductor wiring formed similarly to the conductor wirings is provided on the insulating base, and an auxiliary bump electrode formed similarly to the bump electrodes is provided on the auxiliary conductor wiring, so that the electrode pads formed on the semiconductor chip can be registered with respect to the bump electrodes on the conductor wirings by positioning the semiconductor chip with reference to the auxiliary bump electrode. It is possible to configure a wiring board having register marks capable of positioning electrode pads of a semiconductor chip with respect to bump electrodes with high accuracy.

Wiring board

A wiring board includes first and second feeding electrodes () provided along both sides of an insulating substrate (), feeding bus lines () extending in a traverse direction and connected to both the feeding electrodes, and conductor wirings () having one side terminals forming inner leads having protruding electrodes () and the other side terminals connected to the feeding bus lines. The inner leads in each unit region are arranged in two lines extending in the traverse direction. The inner leads of a first group are arranged with a dense wiring pitch, and the inner leads of a second group include a dense pitch region in which a wiring pitch is the same as that of the inner leads of the first group, and a sparse pitch region in which a wiring pitch is longer than that of the inner leads of the first group. The inner leads () of the first group and the inner leads () in the dense pitch region of the second group are connected to the feeding bus line on one side of each region, and the inner leads () in the sparse pitch region of the second group are connected to the feeding bus line on the other side of each unit region. Non-uniformity of heights of the protruding electrodes due to a difference in the wiring pitches of the inner leads can be suppressed easily.

Wiring board and method for producing the same

A semiconductor device to be mounted on an external electronic device includes a film substrate on which wiring electrodes are formed, the wiring electrodes being partially covered with a covering member; and a semiconductor chip mounted on the film substrate. In this semiconductor device, the film substrate is folded so that at least one edge of the film substrate is on a side opposite to a side on which the semiconductor chip is mounted, and portions of the wiring electrodes exposed from the covering member on a surface of the film substrate on which the semiconductor chip is mounted are to be connected to electrodes of an external electronic device.

Semiconductor device with folded film substrate and display device using the same

A memory card includes a first nonvolatile memory, a second nonvolatile memory, and a separating portion. The first nonvolatile memory has a predetermined erase unit. The second nonvolatile memory has an erase unit that is larger than the erase unit of the first nonvolatile memory. The separating portion separates at least the portion of the program data that are downloaded onto the memory card that has the possibility of being rewritten, and stores the separated portion onto the first nonvolatile memory and stores the remaining portion onto the second nonvolatile memory.

Memory card

Fluorine-containing copolymer, process for preparing the same and

Growing community of inventors

Osaka, Japan

Takayuki Tanaka