Yamanouchi Pharmaceutical Company Ltd.

Hitachi Cable, Inc.

Astellas Pharma Gmbh

Sumitomo Chemical Company, Limited

Nec Corporation

Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Tokin Corporation

Sciocs Company Limited

Kotobuki Pharmaceutical Co Ltd

Takayuki Suzuki

Tatsuya Maruyama

Kenichi Onda

Masahiko Hayakawa

Souichirou Kawazoe

Tetsuo Matsui

Takeshi Meguro

Takumi Takahashi

Takehiro Yoshida

Toshiyuki Takasu

Kenichirou Sakamoto

Yuji Awamura

Makoto Takeuchi

Takeshi Murakami

Hajime Fujikura

Masatomo Shibata

Takashi Shibuya

Atsushi Noda

Hiroyuki Moritomo

Satoshi Miyamoto

Kunihiro Niigata

Hiroshi Tomiyama

Taichiro Konno

Kenji Negoro

Atsushi Ichikawa

Shin-ichi Tsukamoto

Kazuhiro Ikegai

Masakazu Imamura

Satoshi Hayashibe

Toru Kontani

Toshio Kitamura

Kyoichi Maeno

Kayoko Kitta

Eiji Kurosaki

Takeshi Eri

Yukio Abe

Tetsuji Fujimoto

Mitsuo Fujii

Kazuhito Tanabe

Hiroyuki Hisamichi

Tetsuya Kimizuka

Akiko Orita

Akiyoshi Shimaya

Reiko Koike

Osamu Noshiro

Ken Ikeda

Kazumi Hirano

Shin-ichi Yatsugi

Tokio Yamaguchi

Toshiaki Masumoto

Jun Irie

Ryosuke Nakano

An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Nitride crystal

A nitride semiconductor single crystal substrate manufacturing method includes providing a template that a first nitride semiconductor single crystal layer is hetero-epitaxially grown on a heterogeneous substrate, forming a plurality of linear grooves on a surface of the template that have a depth reaching an inside of the heterogeneous substrate, wherein a pattern of the plurality of the linear grooves has three-fold or six-fold rotational symmetry with respect to a central axis of the template, epitaxially growing a second nitride semiconductor single crystal layer on the template with the plurality of the linear grooves formed thereon, and cutting a nitride semiconductor single crystal substrate from the second nitride semiconductor single crystal layer.

Nitride semiconductor single crystal substrate manufacturing method

A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cmand not more than 600/cmin a section parallel to a surface of the substrate and inside the substrate. A method for making the nitride semiconductor free-standing substrate includes a nitride semiconductor crystal growth step of growing on a heterosubstrate a nitride semiconductor crystal including an inversion domain with a density of not less than 10/cmand not more than 600/cmby adjusting a growth condition at an initial growth stage of the nitride semiconductor crystal, and a separation step for separating the grown nitride semiconductor crystal from the heterosubstrate to form the nitride semiconductor free-standing substrate.

Nitride semiconductor free-standing substrate and method for making same

To provide novel crystals useful as an ingredient for the production of a diabetes remedy. The invention is concerned with &#x3b1;-form crystal and &#x3b2;-form crystal of (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenylethyl)amino]ethyl]acetanilide. The &#x3b1;-form crystal does not exhibit hygroscopicity and has stability such that it can be used as a medicine, and is useful for mass synthesis in the industrial production. The &#x3b2;-form crystal does not relatively exhibit hygroscopicity and is also useful as a production intermediate of the &#x3b1;-form crystal.

&#x3b1;-form or &#x3b2;-form crystal of acetanilide derivative

A method for manufacturing a nitride semiconductor substrate including the steps of: forming a nitride semiconductor layer on a sapphire substrate, and manufacturing a freestanding nitride semiconductor substrate by using the nitride semiconductor layer separated from the sapphire substrate, wherein variability of inclinations of the C-axes, being a difference between a maximum value and a minimum value of inclination of the C-axes in a radially-outward direction at each point on a front surface of the sapphire substrate is 0.3&#xb0; or more and 1&#xb0; or less.

Method of manufacturing nitride semiconductor substrate

A method of making a nitride semiconductor substrate having the steps of providing a free-standing substrate that is of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, attaching a metal to the penetrating pit or the penetrating crack, the metal being adapted to be nitrided, and nitriding the metal to form a nitride that seals the penetrating pit or the penetrating crack. A nitride semiconductor substrate has a free-standing substrate that is formed of a nitride semiconductor and has one of a penetrating pit and a penetrating crack that penetrate from a top surface to a back surface of the free-standing substrate, and a metal nitride that seals the penetrating pit or the penetrating crack. The metal nitride is formed of GaN, InN and AlN.

Nitride semiconductor substrate and method of making same

To provide novel crystals useful as an ingredient for the production of a diabetes remedy. The invention is concerned with &#x3b1;-form crystal and &#x3b2;-form crystal of (R)-2-(2-aminothiazol-4-yl)-4'-[2-[(2-hydroxy-2-phenyleth-yl)amino]ethyl]acetanilide. The &#x3b1;-form crystal does not exhibit hygroscopicity and has stability such that it can be used as a medicine, and is useful for mass synthesis in the industrial production. The &#x3b2;-form crystal does not relatively exhibit hygroscopicity and is also useful as a production intermediate of the &#x3b1;-form crystal.

Provided is a compound having excellent dipeptidyl peptidase IV-inhibiting activity, and a remedy based on the activity for insulin-dependent diabetes (type 1 diabetes), especially for non insulin-dependent diabetes (type 2 diabetes), insulin-resistant disorders, and obesity.

2-cyano-4-fluoropyrrolidine derivative or its salt

The present invention provides an azulene derivative and a salt thereof, wherein an azulene ring is bonded to a benzene ring directly or via a lower alkylene which may be substituted with a halogen atom and the benzene ring is directly bonded to the glucose residue, and it is usable as a Na-glucose cotransporter inhibitor, especially for a therapeutic and/or preventive agent for diabetes such as insulin-dependent diabetes (type 1 diabetes) and insulin-independent diabetes (type 2 diabetes), as well as diabetes-related diseases such as insulin-resistant diseases and obesity.

Azulene derivatives and salts thereof

A nitrogen-containing six-membered heterocyclic compound having substituents &mdash;X&mdash;A&mdash;R , &mdash;N(R )-(Ph substituted by R ), and &mdash;CONH , a salt thereof, a prodrug thereof, and a Syk inhibitor containing the same as an active ingredient. (In the formula, A: a (substituted) lower alkylene, a (substituted) arylene, or the like; X: NR , CONR , NR CO, O, or S; R , R : H, a lower alkyl, &mdash;CO-lower alkyl, or &mdash;SO -lower alkyl; R : H, a (substituted) lower alkyl, &mdash;O-lower alkyl, &mdash;S-lower alkyl, &mdash;O-aryl, nitro, cyano, or the like; R : &mdash;CO H, &mdash;CO -lower alkyl, -lower alkylene-CO H, &mdash;NH , -alkylene-NH or the like.

Heterocyclecarboxamide derivative

Amide derivatives or salts thereof

An amide derivative represented by the following general formula (I) or a salt thereof and a pharmaceutical composition containing the amide derivative and a pharmaceutically acceptable vehicle.

Amide derivatives and medicinal compositions thereof

Bisoxadiazolidine derivative

Morpholine derivative

Growing community of inventors

Tsukuba, Japan

Takayuki Suzuki