Canon Kabushiki Kaisha

Takayuki Sumida

Harunobu Ogaki

Akira Shimada

Masataka Kawahara

Akio Maruyama

Toshihiro Kikuchi

Atsushi Ochi

Takahiro Yajima

Hiroki Uematsu

Tadahiko Hirai

Akio Koganei

Kyoichi Teramoto

Akira Shimazu

Takayuki Ito

Masaki Kurihara

Tomona Yamaguchi

Yasuhiro Kawabata

Naoyuki Ito

Youichi Fukaya

Masao Ishioka

Naoki Inatani

Shoji Sudo

Kei Aoki

Tatsuro Uchida

Tatsuya Saito

Takahiro Akiyama

Satoru Shiobara

Takashi Anezaki

Nobutaka Mizuno

Norifumi Kajimoto

Koji Ishizuya

Masaaki Minowa

Yoshinori Tateishi

Hirotoshi Uesugi

Daisuke Shimoyama

Yutaka Setomoto

Tomoyuki Tezuka

Ayako Maruyama

Jun Iwata

Disclosed is a semiconductor device includes a substrate provided with a plurality of pixel electrodes and a control electrode, a functional layer provided over the plurality of pixel electrodes, a transparent electrode provided over the functional layer, an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode and having a first opening reaching the transparent electrode, and a light-shielding conductive layer connected to the transparent electrode via the first opening and constituting at least a part of an electrical path connecting the transparent electrode and the control electrode.

Semiconductor device

A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Semiconductor device having quantum dots, display device, imaging system, and moving body

An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Photoelectric conversion element, light-receiving element including the same, photoelectric conversion apparatus, mobile unit, method for manufacturing photoelectric conversion film, and method for manufacturing photoelectric conversion element

A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° ° C. or higher, and the following Equation (1) is met: μh≥1.0×10(cm/Vs) . . . (1), where μhdenotes hole mobility of the first interfacial layer.

Photoelectric conversion element that reduces a residual image while enhancing heat resistance

A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.

Manufacturing method for semiconductor apparatus and semiconductor apparatus

The present disclosure is a photoelectric conversion element including: a photoelectric conversion layerincluding a first quantum dotand a second quantum dot, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot, and Equation (1) is satisfied:0.3&#x3c;&#x2003;&#x2003;(1),where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

Photoelectric conversion element

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

Method for producing hollow structure and hollow structure

A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Semiconductor apparatus, photodetection system, light emitting system, and moving body

A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Quantum dot, photoelectric conversion element including the same, light receiving element, photoelectric conversion apparatus, moving object, method for producing quantum dot, and method for producing photoelectric conversion element

A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.

Method for forming color filter array, method for manufacturing imaging apparatus, and imaging apparatus

A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

Method of manufacturing solid-state image sensor, solid-state image sensor, and camera

A method of manufacturing a semiconductor device, the method, comprising a first etching step of etching a substrate on which a silicon member and a compound member containing nitrogen and silicon are exposed, by using a first etching gas containing XeFand H, and a second etching step of etching the substrate by using a second etching gas containing XeF, wherein the second etching gas satisfies at least one of (i) a condition that the second etching gas is lower in a partial pressure of Hthan the first etching gas, and (ii) a condition that the second etching gas is smaller in a quantity of flow of Hthan the first etching gas.

Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device

A wiring board includes a substrate having an adhesive surface, a first wiring, and a second wiring. The adhesive surface is in contact with the first wiring and the second wiring. The first wiring has a penetrating hole extending in a direction perpendicular to the adhesive surface. The second wiring has a first region, a second region, and a third region, which are adjacent regions arranged in that order. The first region is inside the penetrating hole in the first wiring and in contact with a first portion of the adhesive surface that forms part of the penetrating hole. The second region is in contact with the first wiring and faces the first wiring and the substrate. The third region is in contact with a second portion of the adhesive surface outside the first portion.

Wiring board and method for making the same

Provided is a display apparatus using an organic EL device in which blur in a display image to be a problem for the display apparatus is reduced while propagating light propagating through a high-refractive-index transparent layer is efficiently extracted outside. The display apparatus has a configuration in which a high-refractive-index transparent layer is provided on a light exit side of the organic EL device, a light extraction structure is provided on the high-refractive-index transparent layer so as to surround each of subpixels, a visible light absorbing member is arranged between pixels adjacent to each other, and the visible light absorbing member is not arranged in a region between subpixels adjacent to each other within a pixel.

Growing community of inventors

Kawasaki, Japan

Takayuki Sumida