Gigaphoton Inc.

Takayuki Osanai

Atsushi Ueda

Koichiro Koge

Toshihiro Nishisaka

Yukio Watanabe

Yuki Ishida

Toshiya Shintani

Yosuke Takada

Akihiro Ohsawa

Yoshiaki Yoshida

Gouta Niimi

Yusuke Hoshino

A laser system includes a first laser outputting first laser light, an optical intensity changer outputting first pulse laser light, a modulator widening spectral linewidth of the first laser light or the first pulse laser light, an optical fiber amplifier amplifying the first pulse laser light and outputting second pulse laser light, a second laser outputting second laser light, an optical parametric amplifier amplifying the second laser light and outputting third pulse laser light, a wavelength converter outputting fourth pulse laser light using the second and third pulse laser light, an amplification section amplifying the fourth pulse laser light and outputting fifth pulse laser light, and a processor controlling a modulation signal such that the fifth pulse laser light having target spectral linewidth is generated, and controlling the center wavelength of the second laser light such that the fifth pulse laser light having a target center wavelength is generated.

Laser system, pulse laser light generating method, and electronic device manufacturing method

An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.

Extreme ultraviolet light generation apparatus and electronic device manufacturing method

A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.

Chamber device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance L[mm] calculated by the following equation:=272.8&#xb7;

Extreme ultraviolet light generation system and electronic device manufacturing method

An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.

Extreme ultraviolet light generation apparatus, extreme ultraviolet light generation system, and electronic device manufacturing method

An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.

Growing community of inventors

Oyama, Japan

Takayuki Osanai