E.i. Dupont De Nemours and Company

Semiconductor Leading Edge Technologies, Inc.

Takayuki Oba

Akira Inaba

Yasuo Yamamoto

At least two elastic wave sensors are disposed in contact with a workpiece such as a microstructure or an optical structure. Elastic waves generated during chemical mechanical polishing of the workpiece are monitored by using the elastic wave sensors. Chemical mechanical polishing conditions are set to achieve uniform chemical mechanical polishing, or an ending point of the chemical mechanical polishing is set based on the monitored signal by the elastic wave sensors, and a process is carried out for chemical mechanical polishing. By the process, a workpiece is polished uniformly to flatten steps in the workpiece or to flatten surface defects of a structure. Alternatively, by the process, a workpiece having a laminated structure is polished up to an interface of the laminated structure.

Chemical mechanical polishing machine and chemical mechanical polishing method

The purpose of this invention is to provide a terminal electrode composition for a multiple-layered capacitor that is suitable for a plating base and that has improved resistance to heat stress as the result of sintering at a low temperature (high reliability). The terminal electrode composition for multiple-layered capacitor of this invention is made of precious metal particles and 0.5-7 wt. % (based on the weight-of the precious metal particles) of an inorganic binder having a 400.degree.-500.degree. C. glass transition point and a 400.degree.-550.degree. C. glass softening point.

Conductive paste for MLC termination

An electrically conductive thick film resin composition comprising finely divided particles of (1) a conductive metal dispersed in a liquid organic medium comprising (2) acrylic polymer primary binder and (3) network resin auxiliary binder having a thermal degradation temperature of at least 300 C. dissolved in (4) volatile organic solvent.

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Kanagawa, Japan

Takayuki Oba