National Institute of Advanced Industrial Science and Technology

Kabushiki Kaisha Toshiba

Tohoku University

National Institute for Materials Science

Takayuki Nozaki

Shinji Yuasa

Eiji Kitagawa

Akio Fukushima

Hitoshi Kubota

Kay Yakushiji

Hiroshi Imamura

Minoru Amano

Naoharu Shimomura

Daisuke Saida

Yoshishige Suzuki

Yoichi Shiota

Hiroki Noguchi

Kazutaka Ikegami

Kazuhiro Hono

Takao Ochiai

Tadakatsu Ohkubo

Rie Matsumoto

Masafumi Shirai

Xiandong Xu

Masahito Tsujikawa

Makoto Konoto

Rachwal Anna Koziol

Takurou Ikeura

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Magnetic element, magnetic memory device, and magnetic sensor

According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 &#x3a9;&#x3bc;m. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.

Magnetic memory device and method for controlling a write pulse

A magnetic element includes a first magnetic layer and a first nonmagnetic layer. An angle &#x3b8;between a first direction and the magnetization direction of the first magnetic layer satisfies 0&#xb0;&#x3c;&#x3b8;&#x3c;90&#xb0; or 90&#xb0;&#x3c;&#x3b8;&#x3c;180&#xb0; in a state in which neither a voltage nor a magnetic field is substantially applied to the first magnetic layer; and the first direction is from the first nonmagnetic layer toward the first magnetic layer. A resistance&#xb7;area of the first nonmagnetic layer is 10 &#x3a9;&#x3bc;mor more.

Magnetic element

A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.

Resistance change type memory including write control circuit to control write to variable resistance element

A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Magnetic memory

To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

Electric field ferromagnetic resonance excitation method and magnetic function element employing same

According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.

Magnetoresistive element and magnetic memory

Growing community of inventors

Tsukuba, Japan

Takayuki Nozaki