Lumentum Japan, Inc.

Toppan Printing Co., Ltd.

Oclaro Japan, Inc.

Takayuki Nakajima

Yuji Sekino

Akira Nakanishi

Noriko Sasada

Masahiro Ebisu

Hiroshi Suzuki

Atsushi Nakamura

Yoshihiro Nakai

Ryoji Ishii

Shunya Yamauchi

Noboru Sasaki

Kazuhiko Naoe

Takeshi Kanetaka

Miki Oohashi

Masaru Onga

A multi-terraced structure includes three or more sections with different thicknesses and adjacent to each other in a direction in which an optical waveguide extends. An adjacent pair of the three or more sections includes one section smaller in thickness and closer to an end face of the semiconductor multilayers and another section larger in thickness and farther from the end face of the semiconductor multilayers. The three or more sections include: a first section with a smallest thickness, including the lowermost layer; a second section adjacent to the first section, including the lowermost layer and additionally a stress relief layer composed of a material equal to or lower than Au in Young's modulus; and a third section with a largest thickness, including all layers from the uppermost layer to the lowermost layer.

Semiconductor optical device

A ridge type semiconductor optical device includes a first conductivity type semiconductor layer including at least a first stripe section; an active layer including at least an active stripe section on the first stripe section; a second conductivity type semiconductor layer including at least a second stripe section on the active stripe section; a ridge electrode on the second stripe section; an insulation film on an end face of each of the first stripe section, the active stripe section, and the second stripe section; and a film heater on the insulation film, the film heater overlapping with the end face of at least the first stripe section.

Heater-integrated ridge type optical semiconductor optical device

A semiconductor optical device includes an element structure layer that includes a mesa stripe extending in a first direction; an electrode film that covers at least an upper surface of the mesa stripe; an electrode pad portion that covers a part of a first region positioned in a second direction, intersecting the first direction, relative to the mesa stripe on an upper surface of the element structure layer and is electrically connected to the electrode film; a first dummy electrode that covers another part of the first region and is electrically insulated from the electrode film; and a second dummy electrode that covers at least a part of a second region positioned in a third direction, opposite to the second direction, relative to the mesa stripe on the upper surface of the element structure layer and is electrically insulated from the electrode film, wherein the first dummy electrode includes a first portion disposed in the first direction relative to the electrode pad portion and a second portion disposed in a fourth direction, opposite to the first direction, relative to the electrode pad portion.

Semiconductor optical device, optical module, and manufacturing method of semiconductor optical device

A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

Modulation doped semiconductor laser and manufacturing method therefor

An optical subassembly may include a plurality of optical semiconductor devices arrayed such that a plurality of light beams respectively traveling in parallel in a first direction are emitted therefrom or incident thereon. The optical subassembly may also include a carrier on which the plurality of optical semiconductor devices are mounted. Adjacent ones of the plurality of optical semiconductor devices may be located at positions shifted in a second direction orthogonal to the first direction and may be shifted in the first direction so as not to face each other in the second direction.

Optical subassembly

An optical transmitter module includes optical semiconductor devices including a first optical semiconductor device, a temperature adjustment means for collectively performing temperature adjustment on the optical semiconductor devices, and a first thermal resistor that is disposed between the first optical semiconductor device and the temperature adjustment means, in which, when the temperature adjustment means is driven, the temperature of the first optical semiconductor device is higher than temperatures of other optical semiconductor devices which are different from the first optical semiconductor device.

Optical transmitter module, optical module, optical transmission equipment and method of manufacturing thereof

Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.

Optical semiconductor device, optical transmitter module, optical module, and optical transmission equipment, and method for manufacturing thereof

A submount which has a mounting surface on which three or more semiconductor lasers are arranged in a first direction, and includes a heat generator configured to increase the temperatures of the three or more semiconductor lasers, in which, where the heat generator generates heat, a first heat of the heat absorbed by a first semiconductor laser of the three or more semiconductor lasers disposed at one end along the first direction is larger than a second heat of the heat absorbed by a second semiconductor laser of the three or more semiconductor lasers disposed to be adjacent to the first semiconductor laser on the mounting surface.

Submount, optical transmitter module, optical module, optical transmission equipment, and control method therefor

A vapor-deposited film having a substrate consisting essentially of a polymer material and a vapor-deposited layer consisting essentially of a ceramic, the substrate being subjected to plasma pre-treatment using a hollow anode plasma treatment device, prior to vapor deposition of the vapor-deposited layer.

Growing community of inventors

Tokyo, Japan

Takayuki Nakajima