Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Takayuki Naba

Hiromasa Kato

Keiichi Yano

Hiroshi Komorita

Noritaka Nakayama

Masashi Umehara

Michiyasu Komatsu

Noboru Kitamori

Nobuyuki Mizunoya

Kazuo Ikeda

Tadashi Tanaka

Haruhiko Yamaguchi

Hideki Yamaguchi

Seiichi Suenaga

Maki Yonetsu

Takashi Hino

Kiyoshi Iyogi

Yoshitoshi Sato

Kazuo Matsumura

Sachiko Fujisawa

Kimiya Miyashita

Noritaka Toshiba Materials Co Ltd Nakayama

A ceramic circuit board includes a ceramic substrate and a metal plate bonded together via a bonding layer, wherein when the ceramic circuit board is observed through a cross-section defined by a thickness direction and lateral direction of the ceramic circuit board: a side surface of the metal plate has an inclined shape; and the bonding layer has a bonding-layer protruding portion which protrudes by 20 μm or more and 150 μm or less from an edge where the bonding layer is in contact with the side surface of the metal plate. The shape and Vickers hardness of the side surface of the metal plate are controlled. The ceramic substrate is preferably a silicon nitride substrate.

Ceramic circuit board and semiconductor device using same

According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mmand includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.

Ceramic metal circuit board and semiconductor device using the same

A bonded body according to an embodiment includes a substrate, a metal member, and a bonding layer. The bonding layer is provided between the substrate and the metal member. The bonding layer includes a first particle including carbon, a first region including a metal, and a second region including titanium. The second region is provided between the first particle and the first region. A concentration of titanium in the second region is greater than a concentration of titanium in the first region.

Bonded body, circuit board, and semiconductor device

A ceramic circuit board comprises: a ceramic substrate with a 1.0 mm thickness or less including a first surface and a second surface, the first surface including a first area and a second area; a first metal plate joined to the first area; and a second metal plate joined to the second surface. The second area has a first waviness profile along a first side of the first surface, the first waviness profile having one extreme value or less. The second area has a second waviness profile along a second side of the first surface, the second waviness profile has not less than two nor more than three extreme values.

Ceramic circuit board and semiconductor module

The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

Circuit substrate and semiconductor device

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L/Hof a first protruding portion of the first bonding layer and L/Hof a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1&#x2212;t2|&#x2265;0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved.

Silicon nitride circuit board and electronic component module using the same

A ceramic/copper circuit board of an embodiment includes a ceramic substrate and first and second copper plates bonded to surfaces of the ceramic substrate via bonding layers containing active metal elements. In cross sections of end portions of the first and second copper plates, a ratio (C/D) of an area C in relation to an area D is from 0.2 to 0.6. The area C is a cross section area of a portion protruded toward an outer side direction of the copper plate from a line AB, and the area D is a cross section area of a portion corresponding to a right-angled triangle whose hypotenuse is the line AB. R-shape sections are provided at edges of upper surfaces of the first and second copper plates, and lengths F of the R-shape sections are 100 &#x3bc;m or less.

Ceramic/copper circuit board and semiconductor device

An electronic component module has a circuit board in which metal plates are bonded to both surfaces of a ceramic substrate, and an electronic component that is bonded to at least one surface of the metal plate and is operable at least 125&#xb0; C. The electronic component is bonded to the metal plate via a brazing material layer having a higher melting point than a operating temperature of the electronic component.

Electronic component module

An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains &#x3b2;-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride.

Insulation sheet made from silicon nitride, and semiconductor module structure using the same

A ceramic-metal composite includes a ceramic substrate, an active metal brazing alloy layer, and a metal plate bonded to the ceramic substrate through the active metal brazing alloy layer disposed therebetween. The active metal brazing alloy layer contains a transition metal that is at least one element selected from Group-8 elements specified in the periodic table. According to the above configuration, the following composite and device can be provided: the ceramic-metal composite that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module and a semiconductor device including the ceramic-metal composite.

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Chigasaki Kanagawa, Japan

Takayuki Naba