Nitta Haas Inc.

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Dupont Incorporated

Takayuki Matsushita

Noriaki Sugita

Masashi Teramoto

Shuhei Matsuda

Mika Tazuru

Lee Melbourne Cook

Hiroyuki Nakano

Naresh Kumar Penta

Koichi Yoshida

Shinichi Haba

Yasuyuki Itai

Yoshiharu Ota

Naoko Kawai

Tomoki Yamasaki

Sakiko Nakashima

Tomoyuki Toda

Haruki Nojo

Mika Chinen

The present invention relates to a polishing composition including water and silica, wherein the silica has a BET specific surface area of 30 m/g or more and an NMR specific surface area of 10 m/g or more, and a polishing method using the polishing composition. The polishing composition of the present invention adopts silica having the BET specific surface area falling within the above-described range, and additionally having the NMR specific surface area falling within a specific range, and consequently attains a high polishing rate, and can maintain the polishing rate even when used for a long time.

Polishing composition and polishing method

A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.

Polishing composition

A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.

A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point: 

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Chemical mechanical polishing composition for polishing silicon wafers and related methods

A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: &#x3e;N&#x2014;R&#x2014;N&#x3c; (1) where R represents an alkylene group expressed as CHand 'n' is an integer not less than 1.

A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CH, in which n is an integer of 1 or more.

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Kyoto, Japan

Takayuki Matsushita