Spansion Llc.

Advanced Micro Devices Corporation

Takayuki Maruyama

Fumihiko Inoue

Tomohiro Watanabe

Shenqing Fang

Kuo-Tung Chang

Hidehiko Shiraiwa

Takashi Whitney Orimoto

Lei Xue

Youseok Suh

Meng Ding

Rinji Sugino

Amol Ramesh Joshi

Yukio Hayakawa

Harpreet Kaur Sachar

Jayendra D Bhakta

Hiroyuki Nansei

Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.

Precision trench formation through oxide region formation for a semiconductor device

A memory cell system is provided including a first insulator layer over a semiconductor substrate, a charge trap layer over the first insulator layer, and slot where the charge trap layer includes a second insulator layer having the characteristic of being grown.

Memory cell system with charge trap

The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.

SONOS-NAND device having a storage region separated between cells

Growing community of inventors

Fukushima-ken, Japan

Takayuki Maruyama