Nissan Motor Company Limited

Rohm Co., Ltd.

Takayuki Kitou

Mineo Miura

Noriaki Kawamoto

Satoshi Tanimoto

Tetsuya Hayashi

Hideaki Tanaka

Takashi Nakamura

Yoshio Shimoida

Masakatsu Hoshi

Shigeharu Yamagami

A method for producing a semiconductor device () is disclosed. The semiconductor device () includes: 1) a semiconductor substrate (), 2) a hetero semiconductor area () configured to contact a first main face (A) of the semiconductor substrate () and different from the semiconductor substrate () in band gap, 3) a gate electrode () contacting, via a gate insulating film (), a part of a junction part () between the hetero semiconductor area () and the semiconductor substrate (), 4) a source electrode () configured to connect to the hetero semiconductor area (), and 5) a drain electrode () configured to make an ohmic connection with the semiconductor substrate (). The method includes the following sequential operations: i) forming the gate insulating film (); and ii) nitriding the gate insulating film ().

Method for producing semiconductor device

A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (,,). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().

Silicon carbide semiconductor device and method for producing the same

A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().

A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (, 12). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().

Growing community of inventors

Kameoka, Japan

Takayuki Kitou