Toshiba Memory Corporation

Kioxia Corporation

Takayuki Kashima

Kotaro Fujii

Hiroyuki Yamasaki

Hiroyasu Sato

Takashi Hirotani

Masahiro Fukuda

Kohei Nyui

A semiconductor memory device includes: a first stack including a first polycrystalline semiconductor layer having a first average crystal grain size, a second polycrystalline semiconductor layer having a second average crystal grain size smaller than the first average crystal grain size, an intermediate layer between the first and second polycrystalline semiconductor layers, and a third polycrystalline semiconductor layer provided on the second polycrystalline semiconductor layer and having a third average crystal grain size smaller than the first average crystal grain size; a second stack provided above the first stack and having conductive layers and insulation layers, each conductive layer and each insulation layer being alternately stacked and extending in a first direction; a semiconductor layer through the second stack, and on the third polycrystalline semiconductor layer; and a memory layer through the second stack, and between the semiconductor layer and the conductive layer in the first direction.

Semiconductor memory device having stack of polycrystalline semiconductor layers with diverse average crystal grain sizes

According to one embodiment, a semiconductor storage device includes a substrate; a stacked body provided above the substrate, wherein the stacked body includes a plurality of first insulating layers and a plurality of conductive layers that are alternately stacked on top of one another along a vertical direction; a plurality of columnar portions that penetrate the stacked body; a first slit, provided in the vertical direction, that divides one or more of the plurality of conductive layers at least at an upper portion of the stacked body; and a second insulating layer that overlays an opening of the first slit, which forms a cavity.

Semiconductor storage device and manufacturing method thereof

A semiconductor storage device includes a substrate. A stacked body is disposed above the substrate and has an alternately stacked plurality of first insulating layers and plurality of conductive layers. A plurality of columnar portions penetrate the stacked body and include a core layer disposed at a center portion of the columnar portions, a semiconductor layer provided around the core layer, and a memory film disposed around the semiconductor layer. A slit divides an upper conductive layer at an upper portion of the stacked body. In a columnar portion overlapping the slit, the core layer or the memory film protrudes from the semiconductor layer.

According to one embodiment, a semiconductor memory device includes a plurality of first conductor layers stacked in a first direction, a second conductor layer provided above the first conductor layer, a first semiconductor layer extending in the first direction in the plurality of first conductor layers, a second semiconductor layer including a first portion extending in the first direction in the second conductor layer and a second portion of which a diameter in a cross section orthogonal to the first direction is larger than a diameter of the first portion, and being in contact with the first semiconductor layer in the second portion, and a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer. An upper end of the first charge storage layer protrudes upward in the first direction in comparison with an upper end of the first semiconductor layer.

Semiconductor memory device and method of manufacturing semiconductor memory device

According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.

Semiconductor storage device and method of manufacturing semiconductor storage device

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a stacked body provided on the semiconductor substrate and including a plurality of electrode films being disposed to be separated from each other along a vertical direction, a first semiconductor member provided inside the stacked body and contacting the semiconductor substrate, a second semiconductor member provided on the first semiconductor member inside the stacked body, contacting the first semiconductor member and extending in the vertical direction, and an insulating film provided between the second semiconductor member and the electrode films. A configuration of a contact surface between the first semiconductor member and the second semiconductor member is convex downward.

Growing community of inventors

Yokkaichi Mie, Japan

Takayuki Kashima