Panasonic Corporation

Takayuki Kashima

Kouji Makita

Kenji Yoshikawa

Keiji Ito

Takeshi Yokoyama

On a first region that is a part of one main face of a semiconductor substrate, a first semiconductor laser structureis formed so as to have a first lower cladding layer, a first active layerwith a first quantum well structure and first upper cladding layers, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structureis formed so as to have a second lower cladding layer, a second active layerwith a second quantum well structure and a second upper cladding layer, which are layered in this order, thereby forming a second resonator. End face coating filmsare formed on facets of the first and the second resonators, and a nitrogen-containing layeris formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

Semiconductor laser device and method for manufacturing the same

A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.

Two-wavelength semiconductor laser device and its fabricating method

A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

Semiconductor laser device and manufacturing method thereof

A method for manufacturing a semiconductor laser device in which a first conductivity type cladding layer, and active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth, the second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of a resonator length is within the tolerance in a simple manner.

Method for manufacturing semiconductor laser device and method for inspecting semiconductor laser bar

In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element liand a red laser elementmonolithically integrated on an n-type semiconductor substrate i. Each of the infrared and red laser elementsandhas a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements iiandinclude p-type contact layersandon the ridges of the respective waveguides. The p-type contact layeris thinner than the p-type contact layer

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Hyogo, Japan

Takayuki Kashima