Tokyo Electron Limited

Takayuki Karakawa

Jun Ogawa

Noriaki Fukiage

Akihiro Kuribayashi

Toyohiro Kamada

Takeshi Oyama

Yutaka Takahashi

Kentaro Oshimo

Kazumi Kubo

Hideomi Hane

Shimon Otsuki

Yasuo Kobayashi

A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NHto the surface of the substrate and causing NHgroups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHgroups are adsorbed and causing the silicon-containing gas to adsorb on the NHgroups; and (c) activating and supplying a second process gas containing Nto the surface of the substrate on which the NHgroups are adsorbed and partly replacing the NHgroups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.

Deposition method

A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.

Film deposition method

A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

Film forming method and film forming apparatus

A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.

A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

Film forming apparatus, method of cleaning film forming apparatus, and storage medium

A substrate processing apparatus includes: a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted; a process vessel for defining a process chamber including a first region and a second region through which the substrate mounting region passes in order; a precursor gas supply unit for supplying a precursor gas to the first region; a process gas supply unit for supplying a first gas or a second gas differing from the first gas to the second region; at least one plasma generating unit for generating plasma of the first gas or the second gas in the second region; and a control unit for executing a repetition control of repeating a first operation for supplying the first gas to the second region for a first time and a second operation for supplying the second gas to the second region for a second time.

Substrate processing apparatus and substrate processing method

A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.

Disclosed is a method of forming a nitride film on a substrate to be processed ('processing target substrate') in a processing container. The method includes an adsorption step of supplying a precursor gas including a silicon-containing gas into the processing container, and adsorbing a molecule of the precursor gas onto a surface of the processing target substrate, and a reaction step of supplying a reaction gas including a nitrogen- and hydrogen-containing gas while supplying microwaves from an antenna to generate plasma of the reaction gas just above the processing target substrate, and performing a plasma processing, by the generated plasma, on a surface of the substrate to be processed on which the molecule of the precursor gas has been adsorbed.

Method of forming nitride film with plasma

Disclosed is a method of forming a nitride film on an object to be processed ('processed object'). The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b).

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Nirasaki, Japan

Takayuki Karakawa