Hitachi High-tech Corporation

Hitachi, Ltd.

Elpida Memory, Inc.

Fujitsu Corporation

Renesas Technology Corp.

Hitachi Chemical Company, Ltd.

Takayuki Kanda

Yusuke Shimizu

Ai Masuda

Shigeki Yamaguchi

Shinichi Horibe

Akimasa Osaka

Daichi Furukawa

Shuji Ikeda

Norio Suzuki

Satoshi Sakai

Matahiro Komuro

Yuichi Satsu

Yasuko Yoshida

Atsushi Hiraiwa

Naomi Miyashita

Masayuki Aoki

Hiroyuki Suzuki

Toshiaki Kusunoki

Yoshifumi Sekiguchi

Shin Imamura

Takuo Ohashi

Taishi Kubota

Yoshihiro Kitamura

Eri Takahashi

Susumu Sakurai

Nobuo Abe

The invention is to provide a microstructural image analysis device and a microstructural image analysis method capable of quantifying the relations in a plurality of regions included in a microstructural image. There is provided a microstructural image analysis device for analyzing a microstructural image. The microstructural image analysis device includes a region processing unit that extracts a first region and a second region from the microstructural image and expands the first region and the second region, an overlapping region extraction unit that extracts an overlapping region of both the first region and the second region each time the first region and the second region are expanded, and a persistence diagram generation unit that generates a persistence diagram based on a hole region generated and eliminated due to the overlapping region.

Microstructural image analysis device and microstructural image analysis method

Clinical analyzer

Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (), a GaN layer () that is provided on the incident side to the sapphire substrate () and includes GaN, a quantum well structure () provided on the incident side to the GaN layer (), and a conductive layer () provided on the incident side to the quantum well structure (), wherein a plurality of emitting layers () including InGaN and a plurality of barrier layers () including GaN are alternatively stacked in the quantum well structure (), and an oxygen-containing layer () including oxygen is provided between the quantum well structure () and the conductive layer ().

Scintillator, measuring device, mass spectrometer, and electron microscope

The purpose of the present invention is to provide an alcoholic solvent, in which FeCo-based particles becoming a soft magnet are improved, for enhancing properties of a magnetic material using no heavy rare earth elements, and is to provide a sintered magnet produced by using it.

Alcoholic solution and sintered magnet

Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Magnetic material and motor using the same

A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-Hconcentration in the ambient gas and a subsequent second ISSG process using a 5%-Hconcentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

Method for controlling thickness distribution of a film

A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.

Manufacturing method of semiconductor device and oxidization method of semiconductor substrate

After a first gate oxide film () is formed on a substrate (), a nitride layer () is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (A) in the thinner film part area and a third gate oxide film (B) in a thicker film part area. By executing second oxynitriding process, nitride layers (A andB) are formed at the thinner and the thicker part areas.

Method of manufacturing semiconductor device having oxide films with different thickness

A protection film is formed on a silicon oxide film formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

Method of manufacturing a semiconductor integrated circuit device

Color information of a color image is represented by the Lab color space. A user can change hue by moving the position of a reference circle displayed on the a*b* plane in the Lab color space and change saturation by changing the size of the reference circle. The color information of the color image is changed with changes in the reference circle, allowing the user to conjecture changes in the color image visually and make color corrections easily and quickly.

Image processing apparatus for correcting color space coordinates and

In compressing a static image, image data is displayed in the window on the display unit, and the operator specifies a segmented rectangle. The specific coordinates of the segmented rectangle are stored as positional coordinate information, and are amended in an amending process so that the segmented rectangle may not destroy the basic blocks used in the compressing process. The image segmented by the amended and segmented rectangle is an image formed by basic blocks, and the data is not rounded in the recompressing process, thereby successfully maintaining the quality of the image.

Image processing device and method for amending box of compressed image

Growing community of inventors

Tokyo, Japan

Takayuki Kanda