Tokyo Electron Limited

Takayuki Kamaishi

Seishi Murakami

Sumi Tanaka

Einosuke Tsuda

Kouki Suzuki

Akitaka Shimizu

Takashi Sakuma

Masahiko Tomita

Takashi Kobayashi

Takamichi Kikuchi

Masato Morishima

Akinori Shimamura

A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.

Substrate processing apparatus and substrate loading mechanism

Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

Process gas introducing mechanism and plasma processing device

A processing gas is prevented from entering into a space below a placement table. A supporting surfacefor supporting the lower face of a placement tableis provided at an inner circumferential portion of the upper end of a support. A circumferentially extending purge gas grooveis formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support. A narrow flow pathis provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support. A purge gas fed from purge gas-feeding meansinto the purge gas groove diffuses in the circumferential direction in the purge gas grooveand flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas grooveand a space Sbelow the placement table.

Heat treatment apparatus

A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

Growing community of inventors

Nirasaki, Japan

Takayuki Kamaishi