Sanyo Electric Co., Ltd.

Takayuki Kaida

Tetsuya Miwa

Takashi Noma

Mitsuru Okigawa

Ryu Shimizu

Kaoru Taketa

Seiji Kai

Shoji Sudo

Mamoru Arimoto

Tsutomu Imai

Yukihiro Ohya

A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the signal charges and a second gate electrode formed at a second distance from the first impurity region for discharging unnecessary signal charges after extraction of a voltage signal from the first impurity region. The first distance between the first impurity region and the first gate electrode is larger than the second distance between the first impurity region and the second gate electrode.

Solid-state image sensor

A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t, of the insulation film, thickness, t, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S&#x3c;(2t+2t).

Semiconductor device for use in a solid state imaging device

A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Semiconductor device

A plurality of source/drain regions are formed on a surface of a silicon substrate at a prescribed space. Floating gate electrodes are formed on sides of a channel region closer to the source/drain regions respectively through a first insulator film. Projections are formed on peripheral edge portions of the floating gate electrodes respectively. A control gate electrode is formed over the channel region and the floating gate electrodes through a second insulator film. The control gate electrode is opposed to the floating gate electrodes at one surface through the second insulator film.

Transistor, semiconductor memory and method of fabricating the same

A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate electrode has an end surface. A control gate electrode is provided over the semiconductor substrate so as to overlap the floating gate electrode. The control gate electrode has an end surface formed level with the end surface of the floating gate electrode.

Split gate transistor array

A non-volatile semiconductor memory device is provided that includes a split gate type memory cell and a control unit. The split gate type memory cell has a floating gate electrode and a control gate electrode. The control unit counts a number of data rewritings and controls the voltage applied to the control gate electrode so that the Fowler-Nordheim tunnel current increases to sufficiently pull out the charge stored in the floating gate electrode when the number of data writings exceeds a predetermined number. This extends the life of the memory device.

Growing community of inventors

Gifu, Japan

Takayuki Kaida