Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Takayuki Kai

Tomohiro Okumura

Mitsuo Saitoh

Izuru Matsuda

Yoichiro Yashiro

Yukihiro Maegawa

Yuichiro Sasaki

Takafumi Okuma

Kouki Ichihashi

Hitoshi Yamanishi

Yukio Hiraoka

Shinichiro Uemura

Daishiro Saito

An optical unit for a laser processing system includes a laser diode including a plurality of laser emitters which emit laser light, a lens unit including a plurality of lenses, a holding block having a light-transmitting property, and a light-shielding film. The holding block and the laser diode are bonded to each other with a first adhesive, and the lens unit and the holding block are bonded to each other with a second adhesive. The light-shielding film is located between the lens unit and the holding block.

Optical unit for laser processing system and laser processing system

A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Semiconductor device and method for manufacturing semiconductor device

A digital circuit portion () and an analog circuit portion () are formed in a surface portion of a semiconductor substrate (). A via () is formed in a region between the digital circuit portion () and the analog circuit portion (). The via () extends through the semiconductor substrate () from a front surface to a back surface thereof, and is made of a dielectric () having its surface covered by a metal (). The metal () is grounded. Signal interference between the analog circuit portion () and the digital circuit portion () is reduced by the via ().

Semiconductor device

A fin-semiconductor region () is formed on a substrate (). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region ().

Semiconductor device having a fin-type semiconductor region

A plasma processing apparatus including a vacuum chamber,

Plasma processing method and apparatus

A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber while maintaining the interior of the vacuum chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window which faces a substrate placed on a substrate electrode in the vacuum. Plasma is generated in the vacuum chamber to process the substrate or a film on the substrate. Particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber, and while maintaining the interior of the chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum Thus, plasma is generated in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the antenna cover by the slit cover, and fixing the slit cover to a wall surface of the vacuum chamber.

Growing community of inventors

Kyoto, Japan

Takayuki Kai