Nec Lcd Technologies, Ltd.

Nlt Technologies, Ltd.

Tianma Japan, Ltd.

Tianma Micro-electronics Co., Ltd.

Takayuki Ishino

Shinichi Nakata

Yuji Yamamoto

Masami Yamashita

Hiroyuki Sekine

Fuminori Tamura

Shigeru Kimura

Kazushige Takechi

Yusuke Yamamoto

Akitoshi Maeda

Satoshi Doi

Shuhei Nara

Yoshikazu Hatazawa

Toru Ukita

Michiaki Sakamoto

Shinichi Nishida

Hideki Ito

Mamoru Okamoto

Takayuki Konno

Tsutomu Kadotani

Masanobu Hidehira

Shouichi Kuroha

Hiroki Sugaya

Yoshitaka Horie

An active matrix substrate includes a plurality of pixel electrodes; a plurality of switching elements that connect to each of the plurality of pixel electrodes; a plurality of pixel lines that connect to each of the plurality of switching elements; a plurality of connection lines that connect to each of the plurality of pixel lines; and a plurality of terminals that connect to each of the plurality of connection lines. An arrangement direction of the pixel lines and an arrangement direction of the terminals differ.

Active matrix substrate, liquid crystal display device, self-luminous display device, and imaging device

A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Device including element having rectification characteristics and thin film transistor

An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Image sensor

In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

Image sensor and method of manufacturing the same

Provided are a photoelectric conversion device, a method of manufacturing the photoelectric conversion device, and an X-ray image detector. A photoelectric conversion device at least includes a photodiode device. The photodiode device includes a lower electrode and an upper electrode, and a photoelectric conversion layer put between the lower and upper electrodes, where the photoelectric conversion layer includes a patterned edge surface, is smaller in size than the lower electrode and is placed on a surface of the lower electrode. The photodiode device further includes a protecting film covering at least the patterned edge surface of the photoelectric conversion layer. The protecting film except for an area where a contact hole is formed and the lower electrode are formed with a same-shaped pattern.

Photoelectric conversion device, method of manufacturing the same, and X-ray image detector

To provide a touch sensor board and the like capable of improving the visibility of the screen and the manufacture yield simultaneously. The touch sensor board includes a plurality of mutually parallel first electrodes extended along a first direction and a plurality of mutually parallel second electrodes extended along a second direction. Regarding the first and second electrodes, one of those is connected to each electrode element via a same-layer connection pattern while the other is connected to each electrode element via a different-layer connection pattern. The same-layer connection pattern and the different-layer connection pattern overlap on one another via an interlayer film formed by an insulator. Further, the interlayer film is continued from the overlapping part between the same-layer connection pattern and the different-layer connection pattern via a gap part between each of the electrode elements, and the interlayer film is formed to be continued in the gap part.

Touch sensor board, image display device, and touch sensor board manufacturing method

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

Image sensor and manufacturing method thereof

To provide an active-matrix type liquid crystal display device having a structure in which alignment of flattening films formed in the display region is uniform and fine, which can secure a large storage capacitance with a small area and achieve a high numerical aperture. A recessed region having no flattening film is formed in a part on a source electrode. In the recessed region, a common electrode made with a transparent conductive film covers a source electrode to form a second storage capacitor.

Liquid crystal display device

A liquid crystal display is fabricated which has bus wires disposed in a grid shape, switching elements coupled to the bus wires, and pixel electrodes which are disposed on an interlayer insulating film formed by coating and which are coupled with the switching elements. In fabricating the liquid crystal display, when a transparent conductive film is formed on the interlayer insulating film which is formed by coating, the temperature of the substrate is controlled to become 100&#xb0; C.-170&#xb0; C. In another embodiment, when the transparent conductive film is formed on the interlayer insulating film in a non-heated condition, an oxygen flow rate ratio is set to 1% or lower, and annealing is performed after forming the film. Thereby, when etching the ITO film on the interlayer insulating film, etching residue is not produced. Further, contact resistance between the ITO film and the lower layer metal can be uniformly decreased, and display defects can be obviated.

Liquid crystal display having transparent conductive film on interlayer insulating film formed by coating

Light exposure areasand light masking areasin a sole reticle are arrayed in alternation to one another in both the longitudinal and transverse directions. Substrate is exposed to light by multi-domain light exposure using this reticle so that the respective areas of the reticle exposed to light with respective shots A to B, B to C . . . , N to M are not adjacent to one another in the boundary portions of the reticle shifted for executing the respective shots, thus relaxing the difference in illuminance between the respective shots and the difference in finish of the boundary portions of the shots, such differences becoming imperceptible to human eyes upon displaying liquid crystal display apparatus.

Mask for light exposure

There is provided a liquid crystal display device including a display screen comprised of a plurality of areas in each of which a pixel pattern is formed, wherein any two areas located adjacent to each other, among the areas, have at least two stitches therebetween.

Growing community of inventors

Izumi, Japan

Takayuki Ishino