Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Toshiba Memory Corporation

Polyplastics Co., Ltd.

Toshiba Medical Systems Corporation

Star Micronics Company Limited

Other

Nissan Motor Company Limited

Kioxia Corporation

Nihon Dempa Kogyo Co., Ltd.

Calsonic Kansei Corporation

Canon Medical Systems Corporation

Sanden Corporation

Japan Aerospace Exploration Agency

Tomoegawa Paper Co., Inc.

Takayuki Ishikawa

Shosuke Fujii

Masumi Saitoh

Hidenori Miyagawa

Hiroyuki Onishi

Jun Sugiyama

Kiyoshi Iwamoto

Nobuhiro Kubota

Yoshifumi Nishi

Teigo Sakakibara

Hiroyuki Nagai

Daisuke Miura

Takao Yamamoto

Noboru Ono

Hidemitsu Uno

Shinichiro Mizoguchi

Takeshi Yoshimoto

Satoshi Nagashima

Shunichi Wakamatsu

Hiroki Tanaka

Yusuke Arayashiki

Harumi Seki

Yukari Ishikawa

Hiroshi Tajika

Takuya Sakaguchi

Ichiro Mizushima

Masato Koyama

Reika Ichihara

Masaki Kobayashi

Daisuke Matsushita

Keiichi Murai

Chika Tanaka

Manabu Tanaka

Hisato Takemoto

Shingo Abe

Ryuji Zaiki

Kazuhito Kobayashi

Toshio Kanoe

Haruji Murakami

Marina Yamaguchi

Satoshi Ogihara

Minoru Tsuchida

Kazuo Imagawa

Mitsuo Wada

Yefei Han

Koichiro Watanabe

Tomoyuki Aketa

Shigeki Asai

Yoshiaki Suzuki

Akira Nagashima

Masanori Takenouchi

Sadayuki Sugama

Takayuki Tsukamoto

Takao Marukame

Akira Takashima

Kiwamu Sakuma

Takashi Sawada

Yuuichi Kamimuta

Koji Masuda

Hiroyuki Ogino

Tatsuya Kato

Mutsumi Okajima

Kazuo Akaike

Minako Kawabe

Hiroyuki Kukita

Toshinori Numata

Kiyohito Nishihara

Mitsuru Iwasaki

Shinichi Sato

Tsuyoshi Shiobara

Hiroyuki Wakabayashi

Yoshinori Shimizu

Tadaharu Kobayashi

Kazuya Goshima

Haruka Kusai

Hitoshi Shimonosono

Toru Katsumata

Akihito Takahashi

Shigenori Watanabe

Shinji Nakamura

Hideki Inokuma

Nobuyuki Momo

Teruomi Gunji

Katsunori Takayama

Yojiro Kojima

Kazufumi Watanabe

Eiji Miyazaki

Tomonori Haraguchi

Jun Hatakeyama

Yosuke Murakami

Mikio Nakai

Tomohiro Maeda

Takashi Tachikawa

Tetsu Morooka

Takashi Haimoto

Mitsuru Sakata

Yusuke Shimada

Hiromichi Kuriyama

Tatsuya Saito

Tomohito Kawashima

A semiconductor memory device includes a semiconductor layer extending in a first direction, a conductive layer opposed to the semiconductor layer in a second direction intersecting with the first direction, an electric charge accumulating layer disposed between the semiconductor layer and the conductive layer, a first insulating layer disposed between the semiconductor layer and the electric charge accumulating layer, and a second insulating layer disposed between the conductive layer and the electric charge accumulating layer. The semiconductor layer includes at least one protrusion protruding in the second direction toward the electric charge accumulating layer. A position in the first direction of the protrusion is inside with respect to corner portions at both ends in the first direction of a surface opposed to the semiconductor layer in the electric charge accumulating layer.

Semiconductor memory device

A lathe capable of facilitating maintenance of a chucking mechanism. A chuck operating apparatus includes a claw and a shifter to open and close a chuck provided on a spindle. The tilt claw provided outside the spindle has a first posture to bring the chuck into the opened state and a second posture to bring the chuck into the closed state. The shifter provided outside the spindle and movable in a spindle axis direction is brought in a first position to bring the claw into the first posture and in a second position to bring the claw into the second posture. A roller is mounted on the shifter in a contact position with the claw to roll in the spindle axis direction.

Lathe with chuck

A chuck operating apparatus includes a claw, a shifter, and a shifter drive unit. The rotatable claw has a first posture to bring the chuck into the opened state and a second posture to bring the chuck into the closed state. The rotatable shifter is brought in a first position to bring the claw into the first posture and in a second position to bring the claw into the second posture. The shifter drive unit has a shifter lever having an insertion part provided with a shifter bearing capable of being brought into contact with a side surface of an outward groove of the shifter. A roller is provided on one of the claw and the shifter in a contact position with the other to roll in a spindle axis direction and a groove is formed on the other to receive the roller when the chuck is in the opened state.

Lathe

A lathe capable of shortening a spindle with respect to a spindle axis direction. A spindle provided with a chuck at the front end thereof is rotatably supported on a support by bearings. A chuck operating apparatus includes a tilt claw and a shifter. A built-in motor is disposed between the bearings to rotate the spindle. The claw is provided outside the spindle and between the bearings. The claw has a movable end whose distance from the spindle axis varies between a first posture to bring the chuck into the opened state and a second posture to bring the chuck into the closed state. The shifter is provided outside the claw and movable in the spindle axis direction to be brought in a first position to bring the claw into the first posture and in a second position to bring the claw into the second posture.

A machine tool includes a spindle capable of holding a workpiece and rotatable on a spindle axis and a tool post on which a tool is attachable to machine the workpiece held by the spindle. The tool post includes a first turnable holder turnable on a first turning axis perpendicular to the spindle axis. The first turnable holder has a first tool unit mounting part where a rotary tool is attachable. The tool post further includes a second turnable holder turnable on a second turning axis perpendicular to the spindle axis and different from the first turning axis. The second turnable holder has a second whirling tool mounting part where a thread whirling tool is attachable.

Machine tool

A semiconductor storage device includes: a first conductive layer extending in a first direction; a second conductive layer that is disposed apart from the first conductive layer in a second direction intersecting the first direction, and extends in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer and arranged in the first direction, each of which includes a first portion facing the first conductive layer, and a second portion facing the second conductive layer; a plurality of first memory cells provided between the first conductive layer and the semiconductor layers, respectively; and a plurality of second memory cells provided between the second conductive layer and the semiconductor layers, respectively. A gap is provided between the two semiconductor layers adjacent in the first direction.

Semiconductor storage device

A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.

Resistive random access memory device and method for manufacturing the same

A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.

An X-ray imaging apparatus according to an embodiment includes an X-ray generator, an X-ray detector, an input interface, and processing circuitry. The processing circuitry is configured to: display, on a display, an image based on X-rays detected by the X-ray detector; control, based on a first control signal according to the direction signal, a rotating mechanism of the arm so that the arm performs a first rotation; and control, in response to an end of the first rotation, based on a second control signal, the rotating mechanism so that the arm performs a second rotation which returns the arm toward a position before the first rotation, the position being stored in a memory circuit.

X-ray imaging apparatus

A substance detection system and a substance detection method are provided. The temperature identifying portion identifies a surface temperature of the quartz substrate, based on a difference between a deviation of the fundamental wave frequency from at least any predetermined reference fundamental wave frequency of the reference crystal resonator and the detecting crystal resonator and a deviation of the third harmonic frequency from a predetermined reference third harmonic frequency. The substance identifying portion identifies a temperature at which a contaminant attached to the detecting crystal resonator is desorbed from the detecting crystal resonator to identify the contaminant based on the temperature at which the contaminant is desorbed. The temperature is identified based on a difference between the fundamental wave frequency of the reference crystal resonator and the fundamental wave frequency of the detecting crystal resonator measured by the frequency measuring portion and the temperature identified by the temperature identifying portion.

Substance detection system and substance detection method

A vehicle air-conditioning device is a heat pump type vehicle air-conditioning device including an external heat exchanger that performs heat exchange between refrigerant flowing the inside thereof and outside air. With the vehicle air-conditioning device, a controller functions as a temperature-difference calculation unit that calculates the temperature difference &#x394;T between the refrigerant in a refrigerant flow path on the exit side of the external heat exchanger and the outside air, and in addition, the controller functions as a frost formation determination unit that determines that frost formation is caused on the external heat exchanger on the basis of the elapsed time to of a state in which the temperature difference &#x394;T is equal to or larger than a frost-formation temperature difference at which the frost formation may be caused on the external heat exchanger.

Vehicle air-conditioning device

The invention provides a machine tool capable of facilitating a process of switching product ejecting apparatuses. The machine tool comprises a spindle which rotates a workpiece around an axis of the spindle, an actuator which reciprocates a rod arranged parallel to the axis of the spindle, and a coupler switched between a coupling position and a standby position. The coupler connects the rod and an ejecting shaft inserted in the spindle when held in the coupling position. The coupler is not connected to at least the ejecting shaft when held in the standby position. The ejecting shaft along with the coupler is moved in the direction of the axis of the spindle according to reciprocation of the rod when the coupler is held in the coupling position.

The invention provides a machine tool capable of facilitating a switching between a guide bush mode and a non-guide bush mode. A machine tool comprises a headstock provided with a main spindle for gripping a workpiece, a rail extended along a main spindle axis, a first bearing fixed to the headstock and guided on the rail, a second bearing fixed to the headstock on the front side of the first bearing and guided on the rail, a supporting bed on which a guide bush is removably mounted, and a guide mounted on the supporting bed to movably support the headstock in a direction of the main spindle axis when the guide bush is removed. The rail provides a larger play on the second bearing when the headstock is supported by the guide than when the headstock is not supported by the guide.

A storage apparatus according to embodiments includes: a first interlayer insulating film extending in a first direction; a second interlayer insulating film extending in the first direction; a first conductive layer extending in the first direction and provided between the first interlayer insulating film and the second interlayer insulating film; a second conductive layer extending in a second direction intersecting the first direction; a resistance change layer including a first portion provided between the first interlayer insulating film and the second interlayer insulating film and including a second portion provided between the second conductive layer and the first interlayer insulating film, between the second conductive layer and the first conductive layer, and between the second conductive layer and the second interlayer insulating film; and a sidewall insulating film provided between the first portion and the first interlayer insulating film and between the first portion and the second interlayer insulating film.

Storage apparatus

Growing community of inventors

Yokkaichi, Japan

Takayuki Ishikawa