Tokyo Electron Limited

Takayuki Ishii

Yoshiteru Fukuda

Tomohiro Iseki

Kazuya Nagaseki

Michishige Saito

Takahiro Kitano

Nobuhiro Ogata

Kimio Motoda

Katsunori Ichino

Takashi Terada

Keiji Tanouchi

Shoichi Terada

Ryoichi Yoshida

Ken Kobayashi

Norifumi Kohama

Shigeto Tsuruta

Atsushi Yamashita

Kazuyuki Tashiro

Kouzou Kawahara

Takahiro Sakamoto

Daisuke Simokawa

A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.

Substrate processing method, modification device and substrate processing system

A stage includes a first member made of a material having a density of 5.0 g/cmor less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

Stage and substrate processing apparatus

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

Film forming apparatus and method for manufacturing part having film containing silicon

Disclosed is a liquid coating method. The method executes processes of: coating a coating liquid in a spiral form on a surface of a substrate by ejecting the coating liquid from the ejection nozzle while moving the ejection nozzle in a predetermined direction between the rotary axis and a peripheral edge of the substrate during rotation of the substrate; making a linear velocity at an ejection position of the coating liquid from the ejection nozzle substantially constant by reducing a number of rotations of the substrate as the ejection position is positioned closer to the peripheral edge of the substrate; and making an ejection flow rate of the coating liquid ejected from the ejection nozzle substantially constant by changing a gap between the ejection port of the ejection nozzle and the surface of the substrate based on a flow rate of the coating liquid before ejection from the ejection nozzle.

Liquid coating method, liquid coating apparatus, and computer-readable storage medium

Disclosed is a coating apparatus capable of enhancing the film thickness uniformity. The coating apparatus includes a nozzle and a moving mechanism. The nozzle includes a storage chamber that stores a coating liquid and a slit-like flow path that is in communication with the storage chamber, and discharges the coating liquid through a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and the substrate relatively to each other along a surface of the substrate. Also, in the flow path provided in the nozzle, flow resistance at the central portion in the longitudinal direction is larger than that at both end portions in the longitudinal direction.

Coating apparatus and nozzle

A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Plasma etching method and plasma etching apparatus

A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern; exposing an organic film formed under the mask film by etching the mask film with the pattern of the plasma-processed photoresist film; and etching the organic film by plasma of a mixture gas containing O(oxygen), COS (carbonyl sulfate) and Cl(chlorine).

A coating apparatus includes a nozzle, a moving mechanism, a pressure adjusting unit and a pressure control unit. The nozzle is provided with a storage chamber and a slit-like flow path, and configured to discharge the coating liquid from a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and a substrate relatively to each other along the surface of the substrate. The pressure adjusting unit adjusts the pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit so as to adjust pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit such that the inside of the storage chamber becomes a negative pressure, and fills the coating liquid inside the storage chamber while slowly decreasing the negative pressure inside the storage chamber.

Coating apparatus and method for filling coating liquid

Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.

Coating treatment method and coating treatment apparatus

A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.

Method of processing a substrate and apparatus processing the same

To perform a series of resist coating treatments from application of a resist solution to removal of a resist film on a wafer edge portion in a shorter time. A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.

In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.

Growing community of inventors

Kumamoto, Japan

Takayuki Ishii