Ngk Insulators, Inc.

Takayuki Inoue

Atsushi Kaneda

Makoto Hamazaki

Yasushi Noguchi

Tsuyoshi Watanabe

Kohei Yamada

Takashi Noro

Naoki Okamoto

Yusuke Hosoi

Shiho Matsui

Mariko Kusabe

Kouhei Yamada

A honeycomb structure made of ceramics, wherein the honeycomb structure includes: a borosilicate; and silicon particles doped with at least one dopant, the dopant is a Group 13 element or a Group 15 element, the silicon particles have a dopant amount (A) of 1×10to 5×10/cm, and the honeycomb structure has a silicon particle content (B) of 30 to 80% by mass.

Honeycomb structure and electrically heating support

A honeycomb structure according to at least one embodiment of the present invention includes: partition walls defining cells each extending from a first end surface of the honeycomb structure to a second end surface thereof to form a fluid flow path; and an outer peripheral wall. The partition walls and the outer peripheral wall are each formed of ceramics containing silicon carbide and silicon. A surface of the silicon has formed thereon an oxide film having a thickness of from 0.1 μm to 5.0 μm.

Honeycomb structure and electric heating support using the honeycomb structure

A ceramic honeycomb structure includes: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the plurality of cells to form a fluid flow path extending from one end face to other end face. The honeycomb structure contains: 1) particles including one or more selected from silicon carbide, silicon nitride and aluminum nitride; and 2) silicon doped with a dopant. The dopant is a Group 13 element or a Group 15 element. The honeycomb structure has a silicon content (B) of from 20 to 80% by mass, and the honeycomb structure has a porosity of 30% or less.

A honeycomb structure includes: an outer peripheral wall; and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the plurality of cells extending from one end face to the other end face to form a flow path for a fluid. The partition walls and the outer peripheral wall include ceramics containing at least silicon. A content of silicon in the ceramics is 30% by mass or more. A concentration of at least one dopant in the silicon is from 10to 5&#xd7;10/cm.

Honeycomb structure, electric heating type honeycomb structure, electric heating type catalyst and exhaust gas purifying device

A support for an electric heating type catalyst comprises: a honeycomb structure having partition walls that define a plurality of cells, each of cells extending from one end face to other end face to form a fluid path for a fluid; and a pair of electrode layers formed on a side surface of the honeycomb structure, the pair of electrode layers being arranged so as to face each other across a center of the honeycomb structure. The pair of electrode layers is electrically connected to the honeycomb structure. The honeycomb structure side of each of the electrode layers comprises a portion having a thermal expansion coefficient lower than that of the honeycomb structure.

Support for electric heating type catalyst and exhaust gas purifying device

The honeycomb structure includes a pillar-shaped honeycomb structure body having porous partition wallsdefining a plurality of cells and a circumferential wall, and a pair of electrode members disposed on the side of a side surface of the honeycomb structure body. The pair of electrode members contain metal silicon and boron, at least a part of the electrode member is made of a composite material including, as a main component, silicon containing 100 to 10000 ppm of boron in silicon. In the composite material which is comprised the electrode member, a volume ratio of the silicon containing 100 to 10000 ppm of the boron in the composite material is 70 volume % or more. An electric resistivity of the electrode member made of the composite material is from 20 &#x3bc;&#x3a9;cm to 0.1 &#x3a9;cm.

Honeycomb structure, and manufacturing method of the same

The honeycomb structure includes a honeycomb structure body and a pair of electrode members disposed on a side surface of the honeycomb structure body, each of the pair of electrode members is shaped in the form of a band extending in a cell extending direction, and in a cross section perpendicular to the extending direction of cells, one electrode member is disposed on a side opposite to the other electrode member via a center of the honeycomb structure body, one or more slits opened in the side surface are formed in the honeycomb structure body, the honeycomb structure body has a charging material charged into the at least one slit, the charging material contains aggregates and a neck material, and a ratio (&#x3b1;) of a thermal expansion coefficient &#x3b1;of the charging material to a thermal expansion coefficient &#x3b1;of the honeycomb structure body is from 0.6 to 1.5.

Honeycomb structure

Provided is a method for producing a silicon carbide ceramic easily and simply producing a silicon carbide ceramic having a small amount in resistivity change due to temperature change and being capable of generating heat by current application; and having a forming raw material preparing step of mixing two or more kinds of silicon carbide ceramic powders containing 4H&#x2014;SiC silicon carbide crystals at respectively different content ratio to prepare a forming raw material; a forming step of forming the forming raw material into a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic being adjusted at a content ratio of 4H&#x2014;SiC silicon carbide crystal to a desired value.

Method for producing silicon carbide ceramic and method for producing honeycomb structure

A silicon carbide ceramic is provided which has a small amount of resistivity change due to changes in temperature and which is capable of generating heat by current application. The silicon carbide ceramic contains silicon carbide crystals having 0.1 to 25 mass % of 4H&#x2014;SiC silicon carbide crystals and 50 to 99.9 mass % of 6H&#x2014;SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass % or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding the silicon carbide particles to each other and having a silicon content of from 10 to 40 mass %.

Silicon carbide ceramic and honeycomb structure

The honeycomb structure is provided with a honeycomb structural section, a pair of lateral electrodes on the side face of the honeycomb structural section, and at least one intermediate layer between the honeycomb structural section and the lateral electrodes. The honeycomb structural section has silicon carbide particles having an average particle diameter of 3 to 40 &#x3bc;m and silicon, and the ratio (Si/SiC) of silicon (Si) to silicon carbide (SiC) is 10/90 to 40/60. The lateral electrodes have an average particle diameter of the silicon carbide particles of 10 to 70 &#x3bc;m and a Si/SiC ratio of 20/80 to 50/50. The intermediate layer has an average particle diameter of silicon carbide particles and Si/SiC between those of the honeycomb structural section and those of the lateral electrodes. The electric resistance between the lateral electrodes of the honeycomb structural section is 2 to 100&#x3a9;.

There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 &#x3bc;m, a cell density is from 50 to 150 cells/cm, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 &#x3bc;m, and a volume resistivity at 400&#xb0; C. is from 1 to 40 &#x3a9;cm.

A method for producing an aluminum titanate ceramic, which comprises subjecting, to forming, a raw material for aluminum titanate formation, containing NaO-containing &#x3b1;-alumina particles, to obtain a formed body and then firing the body, wherein the &#x3b1;-alumina particles has such a crystal structure that the ratio of the average value of the average length in axis a direction and the average length in axis b direction, to the average length H in axis c direction is 3 or more.

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Nagoya, Japan

Takayuki Inoue