Toshiba Memory Corporation

Takayuki Hashimoto

Jun Nishimura

Ayaha Hachisuga

A semiconductor memory device comprises a substrate, first semiconductor films extending in a first direction crossing a surface of the substrate and arranged in a second direction and in a third direction, a conductive layer which covers peripheral faces of the first semiconductor films on a cross-section crossing the first direction, and a contact which extends in the first direction. Here, when straight lines disposed at equal intervals in the second direction on the cross-section and perpendicular to the second direction are defined as first to third straight lines, a first number of the first semiconductor films are provided on the first straight line, a second number less than the first number of the first semiconductor films are provided on the second straight line, a third number less than the second number of the first semiconductor films are provided on the third straight line.

Growing community of inventors

Kuwana, Japan

Takayuki Hashimoto