Meiden Nanoprocess Innovations, Inc.

Takayuki Hagiwara

Naoto Kameda

An oxide film formed on a film formation surface of a film formation target housed in a chamber includes a first film formed on the film formation surface and a second film formed on a first film surface. The first film is formed on the film formation surface of the film formation target by an ALD first film formation method that uses only an at least 80 volume % ozone gas as an oxidizing agent. The second film is formed on the first film surface by an ALD or CVD second film formation method that is different from the first film formation method. The second film formation method uses OH radicals generated by a radical reaction between high-concentration ozone gas and unsaturated hydrocarbon gas as an oxidizing agent and makes use of the oxidizing power of the radicals to form the oxide film.

Growing community of inventors

Matsudo, Japan

Takayuki Hagiwara