Shin-etsu Chemical Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Takayuki Fujiwara

Jun Hatakeyama

Masaki Ohashi

Koji Hasegawa

Ryosuke Taniguchi

Masahiro Fukushima

Motoaki Iwabuchi

Kenichi Oikawa

Osamu Watanabe

Tomohiro Kobayashi

Kazuhiro Katayama

Satoshi Watanabe

Masayoshi Sagehashi

Yasuyoshi Kuroda

Teppei Adachi

Takayuki Nagasawa

Ryo Mitsui

Kazuya Honda

Shinya Yamashita

Katsuya Takemura

Keiichi Masunaga

Daisuke Domon

Masashi Iio

Hiroyuki Urano

Masaaki Kotake

Naoya Inoue

Kenji Yamada

Tomomi Watanabe

Takahiro Suzuki

Kousuke Ohyama

An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Onium salt, chemically amplified resist composition and patterning process

An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Resist composition and patterning process

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt which is structured such that an iodized or brominated hydrocarbyl group (exclusive of iodized or brominated aromatic ring) is bonded to a benzene ring via an ester bond-containing group offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition exhibits dissolution contrast, acid diffusion suppressing effect, and excellent lithography performance factors such as CDU, LWR and sensitivity.

Onium salt compound, chemically amplified resist composition and patterning process

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2).

Resist composition and pattern forming process

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Positive resist composition and patterning process

A resist composition comprising a base polymer and an acid generator containing a sulfonium or iodonium salt of iodized benzamide group-containing fluorinated sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. 

A resist composition comprising a base polymer and a sulfonium salt of a carboxylic acid having an iodine or bromine-substituted hydrocarbyl group offers a high sensitivity, minimal LWR and improved CDU, independent of whether it is of positive or negative tone.

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of N-carbonylsulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

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Joetsu, Japan

Takayuki Fujiwara