Sony Corporation

Sony Group Corporation

Takayuki Ezaki

Teruo Hirayama

Hideo Kanbe

Toshiaki Iwafuchi

Tomoshi Oode

Hiroshi Ozaki

Hirotaka Kobayashi

Kentaro Akiyama

Naoto Sasaki

Naoki Matsushita

Natsuya Ishikawa

Yukari Mori

A solid-state image pickup deviceaccording to the present invention includes a semiconductor substrateon which a pixelcomposed of a photodiodeand a transistor is formed. The transistor comprising the pixelis formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiodeis provided within the semiconductor substrateand a part of the pn junction portion of the photodiodeis extended to a lower portion of the transistor formed on the surface of the semiconductor substrate. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

Solid-state image pickup device

The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

Optical module

A solid-state image pickup deviceaccording to the present invention includes a semiconductor substrateon which a pixelcomposed of a photodiodeand a transistor is formed. The transistor comprising the pixelis formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiodeis provided within the semiconductor substrateand a part of the pn junction portion of the photodiodeis extended to a lower portion of the transistor formed on the surface of the semiconductor substrateAccording to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

[Object] To suppress appearance of a ghost. [Solving Means] The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

To suppress appearance of a ghost. The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.

Solid-state imaging device with a hole storage layer

A semiconductor device includes a semiconductor device layer, a multilayered wiring section formed of a plurality of wiring layers and a plurality of interlayer insulating films on one surface of the semiconductor device layer, an external connection electrode formed on one of the plurality of wiring layers, and an opening formed in a concave shape extending from the semiconductor device layer to the multilayered wiring section so as to expose a surface of the external connection electrode; the opening has a larger opening diameter at an end farther from the external connection electrode than at the other end closer to the external connection electrode.

Growing community of inventors

Kanagawa, Japan

Takayuki Ezaki