Kioxia Corporation

Toshiba Memory Corporation

Takayuki Beppu

Masayuki Kitamura

Katsuaki Natori

Hiroshi Toyoda

Kenichiro Toratani

Tomotaka Ariga

Koji Yamakawa

A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

In a manufacturing method of a semiconductor device according to one embodiment, a first gas containing a first metal element is introduced into a chamber having a substrate housed therein. Next, the first gas is discharged from the chamber using a purge gas. Subsequently, a second gas reducing the first gas is introduced into the chamber. Next, the second gas is discharged from the chamber using the purge gas. Further, a third gas different from the first gas, the second gas, and the purge gas is introduced into the chamber at least either at a time of discharging the first gas or at a time of discharging the second gas.

Substrate treatment apparatus and manufacturing method of semiconductor device

According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of HO, HF, NO, NO, NF, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

Method for manufacturing semiconductor device

According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.

Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

Growing community of inventors

Yokkaichi Mie, Japan

Takayuki Beppu