Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Takayuki Asano

Kunihiro Oda

Takeo Okabe

Takafumi Dasai

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSiphase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSiwith X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μmor more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film

Provided is a Ti&#x2014;Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti&#x2014;Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti&#x2014;Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.

Ti-Nb alloy sputtering target and production method thereof

A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.

Cobalt sputtering target

A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 &#x3bc;m or more per 80000 mmon the sputtering surface.

Tungsten silicide target and method of manufacturing same

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Growing community of inventors

Ibaraki, Japan

Takayuki Asano