Toyoda Gosei Co., Ltd.

Takayoshi Yajima

Hiroshi Ito

Toshiya Uemura

Seiji Yamaguchi

Masanobu Ando

Mitsushi Terakami

Akira Kojima

Koji Kaga

A light-emitting device includes a circuit board including a wiring on a surface of a substrate, the wiring including a raised portion, and a light-emitting element mounted on the raised portion. When the light-emitting element is of a flip-chip type, an element electrode thereof is connected to the raised portion such that an edge of the element electrode on an outer periphery side of the light-emitting element is located outside of the raised portion in a top view and an exposed portion of the element electrode is covered with a white or transparent resin. When the light-emitting element is of a face-up type, an element substrate thereof is bonded to the raised portion such that the raised portion is located inside the element substrate in the top view and an exposed portion of a bottom surface of the element substrate is covered with a white resin.

Light-emitting device and method of manufacturing the same

A light-emitting device includes a first light-emitting element, a phosphor, and a second light-emitting element having a peak wavelength between peak wavelengths of two peaks that define a deepest dip in a composite emission spectrum of the first light-emitting element and the phosphor.

Light-emitting device

A light-emitting device includes a first light-emitting element disposed on a substrate, a convex-shaped first sealing resin that includes an annular portion formed in a closed annular shape in a top view and seals the first light-emitting element, a second light-emitting element disposed on the substrate in a region surrounded by the annular portion of the first sealing resin, and a second sealing resin filled in the region surrounded by the annular portion so as to seal the second light-emitting element. One of the first and second sealing resin includes a phosphor particle or the first and second sealing resins include a phosphor particle to emit a different fluorescent color from each other.

A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface.

Method for manufacturing semiconductor light emitting device

A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlInGaN (0&#x2266;X&#x2266;1, 0&#x2266;Y&#x2266;1, 0&#x2266;X+Y&#x2266;1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.

Growing community of inventors

Kiyosu, Japan

Takayoshi Yajima